电子设备中空间质子引起的单事件扰动模型

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509810

B. Doucin, T. Carrière, C. Poivey, P. Garnier, J. Beaucour, Y. Patin

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引用次数: 39

摘要

本文对p-Si核反应引起的能量沉积与电路敏感厚度和质子入射能量的关系进行了评价，建立了一个预测重离子实验中质子诱导SEU截面的模型。给出了一组实验验证，证明了该模型的方便准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Model of single event upsets induced by space protons in electronic devices

An evaluation of energy deposition induced by p-Si nuclear reactions as a function of circuit sensitive thickness and proton incident energy is performed to develop a model which predicts proton-induced SEU cross-sections from heavy ion experiment. A set of experimental validation is presented showing the convenient accuracy of the model.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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