Fast techniques for MOSFET response prediction in space environments

Abstract

The theoretical and practical aspects of two techniques for low dose rate effects investigations in MOS circuits are discussed. The first technique is based on the use of linear response theory together with the conversion model of interface states formation. The cornerstone of the second technique is the radiation induced charge neutralization phenomenon under negative oxide electric field. The application of test techniques for circuit simulation and the extraction of SPICE model parameters is also discussed.