高频单事件打乱SRAM横截面的修正

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509798

S. Buchner, A. Campbell, D. McMorrow, J. Melinger, H. Masti, Y.J. Chen

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引用次数: 16

摘要

单事件干扰横截面表现出时钟频率依赖性，其起源已在CMOS SRAM中进行了研究，同时使用与电路操作同步的脉冲激光和电路模拟器建模程序。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modification of single event upset cross section of an SRAM at high frequencies

Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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