衬底对辐照硅二极管降解的影响

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509754

H. Ohyama, J. Vanhellemont, E. Simoen, C. Claeys, Y. Takami, K. Hayama, K. Yoshimoto, H. Sunaga, K. Kobayashi

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引用次数: 2

摘要

研究了1- mev快中子和1 ~ 2-MeV电子对n/sup +/p和p/sup +/n Si二极管的辐照损伤与Si衬底类型和辐射源的关系。辐照对二极管电性能的影响随辐照量的增加而增加，对CZ-Si二极管的影响比对FZ-Si二极管的影响大得多。辐射损伤的差异被认为是由于晶格缺陷的形成，这与氧相关复合物的产生有关。通过热退火可以恢复退化的性能。结果表明，中子辐照下n/sup +/p Si二极管的反向电流恢复活化能分别为0.35和0.19 eV。

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Substrate effects on the degradation of irradiated Si diodes

Irradiation damage in n/sup +/p and p/sup +/n Si diodes by 1-MeV fast neutrons and 1 to 2-MeV electrons is studied as a function of type of Si substrate and radiation source. The degradation of the electrical performance of diodes by irradiation increases with increasing fluence and is much larger for CZ-Si diodes than for FZ-Si diodes. The difference of radiation damage is thought to be due to the formation of lattice defects which are associated with the creation of oxygen related complexes. The degraded performance recovers by thermal annealing. The activation energy of reverse current recovery of n/sup +/p Si diodes irradiated by neutrons with a fluence of 1/spl times/10/sup 13/ n/cm/sup 2/ is calculated to be 0.35 and 0.19 eV.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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