Simulation of heavy ion latchup cross section curves

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509803

H. de La Rochette, G. Bruguier, J. Palau, J. Gasiot, R. Ecoffet

引用次数: 2

Abstract

The latchup sensitivity of 1 /spl mu/m CMOS structures when subjected to heavy ion irradiation is studied. Cross section curves and threshold LETs obtained by 2D and 3D device simulations are compared to the experimental results.

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重离子闭锁截面曲线模拟

研究了1 /spl μ m CMOS结构在重离子辐照下的锁紧灵敏度。将二维和三维器件仿真得到的截面曲线和阈值let与实验结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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