A MOSFET model including total dose effects

Abstract

In most of the MOSFET models, it is assumed that the rad-induced interface state energy distribution is uniform. This assumption is rarely valid. So, in order to study the influence of the distribution shape, we propose a physical one-dimensional MOSFET model based on Pao and Sah's [1966] analysis. After a description of the model and simulation environment, we give theoretical results about the interface trap effects on weak inversion V-I characteristics, then we compare simulation results to experimental data. Finally, we propose a new method for estimating the total interface charge, including oxide trapped holes and interface states, as a function of the surface potential.