功率mosfet电池对单事件烧坏的灵敏度不均匀性的证据

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509807

C. Dachs, F. Roubaud, J. Palau, G. Bruguier, J. Gasiot, M. Calvet, P. Calvel, P. Tastet

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引用次数: 0

摘要

本文介绍了在一个单元或功率MOSFET的不同区域的重离子辐照下得到的结果。观察到的响应证实，燃尽电流的演变取决于相对于电池的冲击定位，并表明对燃尽的敏感性在晶体管表面上是可变的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evidence of the sensitivity inhomogeneity of power MOSFETs' cells to single event burnout

Results obtained under heavy ion irradiation of one cell or different areas of a power MOSFET are presented. The observed responses confirm that the burnout current evolution depends on the impact localisation with respect to the cell and show that the sensitivity to burnout is variable over the transistor surface.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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