光电器件的伽马和中子辐照

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509837

H. Liscka, H. Henschel, O. Kohn, W. Lennartz, S. Metzger, H. U. Schmidt

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引用次数: 11

摘要

有源光电器件如发光二极管(led)、激光二极管(ld)和光电二极管(pd)在伽马和14 MeV中子辐照下的降解进行了评估。总剂量值和中子影响的选择方式使我们能够得到特别是在空间环境和核工程中的行为估计。这些器件的波长范围从可见光(450纳米)到红外线(1300纳米)。辐照后，led和ld的光输出功率降低，ld的阈值电流也发生偏移。对于led，我们还测量了芯片表面的光功率分布。以/sup 60/Co γ辐照pd，总剂量为10/sup 6/ Gy，以及中子辐照的影响为3/spl倍/10/sup 1/3 cm/sup -2/(1 MeV)，导致暗电流的强烈增加。

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Gamma and neutron irradiation of optoelectronic devices

Active optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodiodes (PDs) were evaluated for degradation under gamma and 14 MeV neutron irradiation. Total dose values and neutron fluences were chosen in such a way that we get estimates of the behaviour especially in space environments and nuclear engineering. The devices are designed for wavelengths from visible (450 nm) to infrared (1300 nm). LEDs and LDs show a reduction of light output power and LDs also a shift of threshold current after irradiation. With the LEDs we also measured the light power distribution on the chip surface. Irradiations of PDs with /sup 60/Co gammas up to a total dose of 10/sup 6/ Gy as well as irradiations with neutrons up to fluences of 3/spl times/10/sup 1/3 cm/sup -2/(1 MeV) lead to a strong increase of dark current.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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