雪崩半导体辐射探测器

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509820

Z. Sadygov, I. Zheleznykh, N. Malakhov, V. Jejer, T. A. Kirillova

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引用次数: 26

摘要

描述了基于Si-SiC和Si-Si/sub x/O/sub y/异质结制备的新型雪崩半导体探测器的工作原理。根据SiC和Si/sub x/O/sub y/层的电导率，可以获得增益为10/sup 3/至10/sup 5/的均匀雪崩过程。本文介绍了两种用于波长范围500-1000 nm，量子效率为60/spl plusmn/10% (650 nm)和200-700 mm，量子效率为60/spl plusmn/15% (450 nm)的雪崩光电探测器。

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Avalanche semiconductor radiation detectors

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si/sub x/O/sub y/ is described. A uniform avalanche process with gain from 10/sup 3/ to 10/sup 5/ can be reached depending on the conductivity of SiC and Si/sub x/O/sub y/ layers. Two types of avalanche photodetectors designed for applications in wavelength range 500-1000 nm with quantum efficiency 60/spl plusmn/10% (650 nm) and 200-700 mm with quantum efficiency 60/spl plusmn/15% (450 nm) are presented.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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