寄生MOS结构辐射诱导位移的二维数值模拟研究

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509749

R. Escoffier, A. Michez, G. Cirba, G. Bordure, V. Ferlet-Cavrois, P. Paillet, J. Leray

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引用次数: 6

摘要

采用数值模拟的方法研究了不同辐射剂量(60krad)下寄生横向MOS晶体管氧化物的电荷俘获效应。提出了捕获电荷的位置和密度对寄生导通通道产生的影响。

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Radiation induced shift study in parasitic MOS structures by 2D numerical simulation

Charge trapping effects have been investigated by numerical simulation in parasitic lateral MOS transistor oxides under different radiation doses up to 60 krad. We bring out the position and the density of trapping charges influence on the parasitic conduction channels creation.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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