SEU和SEL数据分析获取敏感体厚度的新方法[ic]

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509797

J. Barak, J. Levinson, A. Akkerman, M. Hass, M. Victoria, A. Zentner, D. David, O. Even, Y. Lifshitz

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引用次数: 22

摘要

建议使用短程离子(以及远程离子)来获得敏感体积的厚度d，以及SEU(单事件扰动)和SEL(单事件闭锁)横截面与该体积中沉积的能量/spl sigma// subion /(/spl epsi/)。这些/spl sigma// subion /(/spl epsi/)和d可用于计算质子诱导截面/spl sigma// subp /。对HM65162 CMOS SRAM的研究验证了该方法。计算得到的/spl sigma//sub p/与实验得到的/spl sigma//sub p/吻合较好。

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A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness [ICs]

It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU (single event upset) and SEL (single event latchup) cross sections vs the energy deposited in this volume, /spl sigma//sub ion/(/spl epsi/). These /spl sigma//sub ion/(/spl epsi/) and d can be used for calculating the proton induced cross sections /spl sigma//sub p/. A study of the HM65162 CMOS SRAM demonstrates this method. The calculated /spl sigma//sub p/ is in good agreement with the experimental /spl sigma//sub p/.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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