Investigation of on-chip high temperature annealing of PMOS dosimeters

Abstract

Radiation sensitive pMOS dosimeters can measure only to a maximum dose which is determined by the type, sensitivity and irradiation conditions of the RADFET. On reaching the maximum dose, the dosimeters normally have to be replaced. The aim of this work is to study the feasibility of using on-chip poly-resistor heaters to anneal the dosimeters back to their pre-irradiation threshold voltage. This study shows that on-chip heating is a viable option to achieve post-irradiation annealing, and that the fading characteristics obtained agree with those of oven annealing from a previous study which was carried out on the NMRC RADFETs.