系统研究了工艺参数对再氧化氮化氧化物辐射硬度的影响

Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems Pub Date : 1995-09-18 DOI:10.1109/RADECS.1995.509765

K. Neumeier, H. Bruemmer

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引用次数: 2

摘要

为了优化再氧化氮化氧化物(RNO)栅极介质的辐射硬度，系统地研究了工艺参数的影响。采用正交矩阵法确定了氧化温度、氮化温度和时间与再氧化温度和时间的关系。最佳样品的平带电压位移比最差样品低30倍。与硬化栅极氧化物相比，优化后的RNO介电体的辐射硬度提高了7倍。在1.5 Mrad(Si)下，25 nm栅极电介质的平带电压移降至150 mV。

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A systematic investigation of the influence of processing parameters on the radiation hardness of reoxidized nitrided oxides

To optimize radiation hardness of reoxidized nitrided oxides (RNO) gate dielectrics the influence of processing parameters was systematically investigated. The dependence on oxidation temperature, nitridation temperature and time, and reoxidation temperature and time was determined by means of orthogonal matrices. The best samples exhibited a 30 times lower flatband voltage shift than the worst. Compared to hardened gate oxides optimized RNO dielectrics showed an improvement in radiation hardness by a factor of 7. At 1.5 Mrad(Si) the flatband voltage shift of 25 nm gate dielectrics was reduced to 150 mV.

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Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems

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