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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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Cathode sputtered permalloy films of high AMR effect and low coercivity 高磁阻效应、低矫顽力的阴极溅射坡莫合金薄膜
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889471
G. Stangl, P. Aigner, P. Hudek, I. Kostic, R. Chabicovsky, H. Hauser, J. Hochreiter, K. Riedling
{"title":"Cathode sputtered permalloy films of high AMR effect and low coercivity","authors":"G. Stangl, P. Aigner, P. Hudek, I. Kostic, R. Chabicovsky, H. Hauser, J. Hochreiter, K. Riedling","doi":"10.1109/ASDAM.2000.889471","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889471","url":null,"abstract":"The anisotropic magnetoresistive (AMR) effect of dc sputtered Ni 81%-Fe 19% films has been increased up to /spl Delta//spl rho///spl rho/=3.93% at 50 nm thickness. Investigations have been concentrated on the influence of the target current, the target-substrate distance, and of the temperature of both target and substrate material. As a function of the applied magnetic bias field, the easy axis coercivity of the permalloy film is between 100 A/m and 200 A/m due to induced anisotropy. The dc magnetisation curves represents an almost ideal Stoner-Wohlfarth behaviour with a hard axis coercivity between 0 and 20 A/m.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128479018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The influence of the electrolyte-semiconductor interface on the doping profile measurement of a GaAs structure 电解质-半导体界面对砷化镓结构掺杂谱线测量的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889514
R. Kinder, B. Paszkiewicz, B. Ściana, L. Huleny
{"title":"The influence of the electrolyte-semiconductor interface on the doping profile measurement of a GaAs structure","authors":"R. Kinder, B. Paszkiewicz, B. Ściana, L. Huleny","doi":"10.1109/ASDAM.2000.889514","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889514","url":null,"abstract":"The electrical behavior of the 0.1 M Tiron electrolyte-GaAs interface has been investigated. Attention is centred upon the properties of the electrolyte-GaAs interface and its influence on the capacitance-voltage measurements. Electrical properties of the interface were measured by electrochemical C-V techniques and impedance spectroscopy.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116950513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
RBS study of amorphous silicon carbide films annealed by pulse electron beam 脉冲电子束退火非晶碳化硅薄膜的RBS研究
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889508
J. Huran, I. Hotovy, A. Kobzev, N. Balalykin, J. Staňo, L. Spieß
{"title":"RBS study of amorphous silicon carbide films annealed by pulse electron beam","authors":"J. Huran, I. Hotovy, A. Kobzev, N. Balalykin, J. Staňo, L. Spieß","doi":"10.1109/ASDAM.2000.889508","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889508","url":null,"abstract":"We present properties of nitrogen-doped amorphous silicon carbide films that were grown by a plasma enhanced chemical vapour deposition (PE CVD) technique and annealed by pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH/sub 3/ into the gas mixture of silane SiH/sub 4/ and methane CH/sub 4/, which were directly introduced into the reaction chamber. The actual amount of nitrogen in the SiC films was determined by Rutherford backscattering spectrometry (RBS). A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125271010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanical integrity failure of bulk-micromachined Si wafers: Influence of structure geometry and wafer handling 大块微加工硅晶圆的机械完整性失效:结构几何和晶圆处理的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889487
M. Bartek
{"title":"Mechanical integrity failure of bulk-micromachined Si wafers: Influence of structure geometry and wafer handling","authors":"M. Bartek","doi":"10.1109/ASDAM.2000.889487","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889487","url":null,"abstract":"Mechanical stability and strength of bulk-micromachined silicon wafers has been studied to optimize the fabrication sequence and design for maximum yield. The effects of geometry parameters (e.g. fill factor, membrane thickness) were investigated. Results show that under the condition of reasonable geometries (limited etch depth) and a proper wafer handling the bulk-micromachined trenches and recesses do not cause any significant decrease in the mechanical-integrity-failure related yield. Very thin (<10 /spl mu/m) Si membranes, on the other hand, are very sensitive to any mechanical loads and more elaborated fabrication sequence is required to guarantee a reasonable yield.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122094844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influence of substrate preparation on fracture properties of InP cantilevers 衬底制备对InP悬臂梁断裂性能的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889527
I. Behrens, E. Peiner, A. Bakin, A. Schlachetzki
{"title":"Influence of substrate preparation on fracture properties of InP cantilevers","authors":"I. Behrens, E. Peiner, A. Bakin, A. Schlachetzki","doi":"10.1109/ASDAM.2000.889527","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889527","url":null,"abstract":"In this study we investigate the influence of the substrate preparation on the mechanical properties of indium phosphide layers used for hetero-micromachining. These layers were grown on silicon by metalorganic vapour-phase epitaxy. Exploiting the etching selectivity of indium phosphide versus silicon we realized freestanding cantilevers oriented in <100> and <110> crystal directions. Fracture-stress measurements revealed that cantilevers fabricated from a layer grown on structured substrates show a lower value compared to those grown on unstructured silicon.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123122084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectric properties of Schottky barriers based on porous silicon 多孔硅基肖特基势垒的光电性质
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889530
V.I. Blynski, S.K. Lazarouk, S. Malyshev, T.P. Matskevich
{"title":"Photoelectric properties of Schottky barriers based on porous silicon","authors":"V.I. Blynski, S.K. Lazarouk, S. Malyshev, T.P. Matskevich","doi":"10.1109/ASDAM.2000.889530","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889530","url":null,"abstract":"Spectral and dynamic characteristics of Al-porous Si structure prepared by electrochemical anodizing of monocrystalline silicon in the transient mode (/spl rho/=0.1-0.01 Ohm/spl middot/cm) have been studied. It is found that for blocking voltage corresponding to current above threshold flowing through the structure there occurs amplification of the photocurrent. The photocurrent amplification process is explained by light-induced modulation of porous Si resistance.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123405870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film interdigitated electrode arrays applicable for non-invasive monitoring of human skin 薄膜交叉指状电极阵列，适用于人体皮肤的无创监测
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889510
R. Ivanic, M. Weis, T. Danilla, V. Tvarozek
{"title":"Thin film interdigitated electrode arrays applicable for non-invasive monitoring of human skin","authors":"R. Ivanic, M. Weis, T. Danilla, V. Tvarozek","doi":"10.1109/ASDAM.2000.889510","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889510","url":null,"abstract":"The general principle of the human skin electrical properties measurements is a special configuration of the electrode system with electric field lines of vector intensity E cross (transversely) planar structures of skin. An application of the electrode systems for electric parameters measurement in dermatology has to take in consideration the relation between thickness of the skin and the distance of electrode. Electrical properties of the human skin measuring system have been simulated using program PSpice and QuickField. With aspect of theoretical and simulated analysis non symmetric IDA electrode arrays system were designed and fabricated.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"289 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116402798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaN deposition on AlN/Si substrates for FEAs 氮化镓在AlN/Si衬底上的FEAs沉积
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889502
S. Lasisz, R. Korbutowicz, R. Paszkiewicz, W. Czarczynski, Z. Znamirowski
{"title":"GaN deposition on AlN/Si substrates for FEAs","authors":"S. Lasisz, R. Korbutowicz, R. Paszkiewicz, W. Czarczynski, Z. Znamirowski","doi":"10.1109/ASDAM.2000.889502","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889502","url":null,"abstract":"The GaN epitaxy on Si substrates shaped specifically for field emission arrays (FEAs) has been described. In such applications the substantial thing is to deposit GaN crystals on tops of Si micropyramids or cones. To achieve such a goal an auxiliary layer of AlN has been applied. It is well known that GaN has far better matching of lattice with AlN compared to Si. It appears that GaN prefers to grow on AlN, too. Furthermore AlN and GaN layers can be grown in the same epitaxy process. In this work the MOVPE method was used.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"646 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116418365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RIE of the polyimide micromechanical structures 聚酰亚胺微机械结构的RIE
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889547
L. Matay, I. Kostic, P. Hrkut, R. Andok
{"title":"RIE of the polyimide micromechanical structures","authors":"L. Matay, I. Kostic, P. Hrkut, R. Andok","doi":"10.1109/ASDAM.2000.889547","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889547","url":null,"abstract":"Polyimides are commercially available materials which are widely used in various aspects of microelectronics. In this work, we show the use of a polyimide as a material suitable for the formation of micromechanical structures and its modification by reactive ion etching.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130615016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Correlation between diffusion length and Hall mobility in different GaAs epitaxial layers 不同砷化镓外延层中扩散长度与霍尔迁移率的关系
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889497
Á. Nemcsics, K. Somogyi
{"title":"Correlation between diffusion length and Hall mobility in different GaAs epitaxial layers","authors":"Á. Nemcsics, K. Somogyi","doi":"10.1109/ASDAM.2000.889497","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889497","url":null,"abstract":"The diffusion length of minority carriers in n-type GaAs epitaxial layers has been studied in this work. The value of diffusion length of minority carriers was determined from the analysis of the photoresponse of an electrolytic barrier applied to the sample surface. The diffusion length on LPE layers was found to be smaller than that on VPE layers. This behaviour is discussed here.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130972544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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