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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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The screening properties of 2DEG in the integral quantum Hall regime 积分量子霍尔体系中2DEG的屏蔽特性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889466
J. J. Mareš, J. Kristofik, P. Hubík
{"title":"The screening properties of 2DEG in the integral quantum Hall regime","authors":"J. J. Mareš, J. Kristofik, P. Hubík","doi":"10.1109/ASDAM.2000.889466","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889466","url":null,"abstract":"Using the electric field penetration technique, the screening by 2DEG in the integral quantum Hall regime was studied. For magnetic fields near the filling factor 2, besides the hopping transport supplying charge into the structure, another new type of mechanism due to the breaking of topology of the 2DEG was identified.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131675456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Instability of homogeneous composition of highly strained QWs in heterostructures GaAs/In/sub x/Ga/sub 1-x/As/GaAs 异质结构GaAs/ in /sub -x/ Ga/sub - 1-x/As/GaAs中高应变量子阱均匀组成的不稳定性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889538
A. Klimovskaya, A. Grigor’ev, V. G. Gule, J. A. Dryha, V. Litovchenko
{"title":"Instability of homogeneous composition of highly strained QWs in heterostructures GaAs/In/sub x/Ga/sub 1-x/As/GaAs","authors":"A. Klimovskaya, A. Grigor’ev, V. G. Gule, J. A. Dryha, V. Litovchenko","doi":"10.1109/ASDAM.2000.889538","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889538","url":null,"abstract":"In/sub x/Ga/sub 1-x/As QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL) study. We have established the relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix. In highly strained layers several PL bands were observed instead of one band. This was shown to be a result of alternating content of In arised only in highly strained layers.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"109 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120850714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On spectrometric performance of GaAs-based radiation detectors gaas基辐射探测器的光谱性能研究
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889548
F. Dubecký, B. Zat’ko, J. Darmo, M. Sekáčová, M. Krempaský, V. Nečas, S. Hlavac, M. Rucek, R. Senderák, B. Szentpáli
{"title":"On spectrometric performance of GaAs-based radiation detectors","authors":"F. Dubecký, B. Zat’ko, J. Darmo, M. Sekáčová, M. Krempaský, V. Nečas, S. Hlavac, M. Rucek, R. Senderák, B. Szentpáli","doi":"10.1109/ASDAM.2000.889548","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889548","url":null,"abstract":"The basic problems and advantages related to spectrometric applications of GaAs-based radiation detectors for the X- and /spl gamma/-ray region are discussed. Two types of detectors are tested, based on (i) semi-insulating GaAs bulk substrate and (ii) vapor phase epitaxy GaAs. Pulse height spectra for detection of /sup 241/Am and /sup 57/Co radionuclide decay standards are demonstrated. With a small volume GaAs detector energy resolution <1 keV is achievable at room temperature. The necessity of a low noise F-E readout electronic chain is demonstrated.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133465166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterojunction bipolar transistor with diffusive and ballistic electron transport in the base 基极具有扩散和弹道电子输运的异质结双极晶体管
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889492
M. Horák
{"title":"Heterojunction bipolar transistor with diffusive and ballistic electron transport in the base","authors":"M. Horák","doi":"10.1109/ASDAM.2000.889492","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889492","url":null,"abstract":"The effect of ballistic transport in the base of the heterojunction bipolar transistor is treated by the modification of the boundary conditions of the standard diffusion equation. The transistor properties are characterised by the y/sub ij/ and h/sub ij/ parameters that are considered as functions of signal frequency and base length. The pure ballistic and pure diffusive electron transport is considered as a special case.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116611979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Raman study of NiO/sub x/ films for gas sensors applications 气体传感器用NiO/ subx /薄膜的拉曼研究
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889506
R. Srnánek, I. Hotovy, V. Malcher, A. Vincze, D. Mcphail, S. Littlewood
{"title":"A Raman study of NiO/sub x/ films for gas sensors applications","authors":"R. Srnánek, I. Hotovy, V. Malcher, A. Vincze, D. Mcphail, S. Littlewood","doi":"10.1109/ASDAM.2000.889506","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889506","url":null,"abstract":"NiO/sub x/ films were prepared by dc reactive magnetron sputtering in an Ar+O/sub 2/ mixed atmosphere. These films were investigated by Raman spectroscopy and SIMS. It was confirmed that as we increased the ratio of oxygen in the oxygen/ argon mixture to 30-40%, the composition of the layers approached the Ni/sub 2/O/sub 3/ composition. Annealing of the layers also led to a change in composition from the nearly perfect (NiO) to a stoichiometry with an excess of O/sub 2/(/spl sim/Ni/sub 2/O/sub 3/).","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126041677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The ohmic contacts on the layers for gas sensors 气体传感器层上的欧姆接触
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889525
E. Ratajová, P. Machac, V. Myslík
{"title":"The ohmic contacts on the layers for gas sensors","authors":"E. Ratajová, P. Machac, V. Myslík","doi":"10.1109/ASDAM.2000.889525","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889525","url":null,"abstract":"This paper is concerned with the deposition of semiconductor layers by laser ablation, the preparation of ohmic contacts, and the application of these layers for gas sensors. A new test contact pattern for contact resistance measurement is proposed. The contact structure has a great influence on measurement accuracy. The specific contact resistance of all samples is improved by annealing, the optimal values of the annealing temperature are in the range of 550-750/spl deg/C. The Pt/Sb metallisation does not improve contact properties.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124709295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical properties of GaAs/sub 1-y/N/sub y/ (y/spl les/0.037) GaAs/sub - 1-y/N/sub -y/ (y/spl les/0.037)的光学性质
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889474
G. Leibiger, B. Rheinlander, V. Gottschalch, M. Schubert, J. Šik, G. Lippold
{"title":"Optical properties of GaAs/sub 1-y/N/sub y/ (y/spl les/0.037)","authors":"G. Leibiger, B. Rheinlander, V. Gottschalch, M. Schubert, J. Šik, G. Lippold","doi":"10.1109/ASDAM.2000.889474","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889474","url":null,"abstract":"The optical properties of MOVPE GaAs/sub 1-y/N/sub y/ (0/spl les/y/spl les/3.7%) single layers and GaAsN/GaAs superlattices are studied using spectroscopic ellipsometry and Raman spectroscopy. We analyse the dielectric function near the critical points E/sub 0/, E/sub 1/ and E/sub 1/+/spl Delta//sub 1/ using Adachi's critical-point model. For the layers and the GaAsN superlattice sublayers we observe the strong reduction of the band gap. Contrary to the red shift of the gap energy E/sub 0/, the E/sub 1/ and E/sub 1/+/spl Delta//sub 1/ energies are linearly blue shifted with increasing y. For 0/spl les/y/spl les/1.65% the observed blueshift of the E/sub 1/ energy is well explained by the combination of the effects of biaxial [001] strain and alloying. In the Raman spectra the redshift and broadening of the GaAs LO/sub 1/ mode and the existence of the nitrogen local mode LO/sub 2/ near 470 cm/sup -1/ have been detected.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128779557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range 掺铍低温生长MBE GaAs:用于太赫兹频率范围内光混合的材料
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889470
J. Darmo, F. Schaffer, A. Forster, P. Kordos
{"title":"Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range","authors":"J. Darmo, F. Schaffer, A. Forster, P. Kordos","doi":"10.1109/ASDAM.2000.889470","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889470","url":null,"abstract":"Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127910134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and technology of InGaP/GaAs DHBTs InGaP/GaAs DHBTs的设计与技术
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889463
A. Rezazadeh, M. Sotoodeh
{"title":"Design and technology of InGaP/GaAs DHBTs","authors":"A. Rezazadeh, M. Sotoodeh","doi":"10.1109/ASDAM.2000.889463","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889463","url":null,"abstract":"A comparison of the DC and RF performance of InGaP/GaAs based SHBT and DHBT is made. These devices have been fabricated using a planar self-aligned technology using ion implant isolation. It was demonstrated that DHBT is the most promising device for power amplifier applications. Finally a new collector design approach for minimising the base transit time in DHBTs is suggested.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117309502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nature of the red photoluminescence in porous silicon 多孔硅中红色光致发光的性质
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889517
T. Torchynska, G. Bacarril-Espinosa, A. Ita-Torre, J. Palacios Gómez, N. Korsunska, L. Khomenkova, B. Bulakh, L. V. Scherbina
{"title":"Nature of the red photoluminescence in porous silicon","authors":"T. Torchynska, G. Bacarril-Espinosa, A. Ita-Torre, J. Palacios Gómez, N. Korsunska, L. Khomenkova, B. Bulakh, L. V. Scherbina","doi":"10.1109/ASDAM.2000.889517","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889517","url":null,"abstract":"Photoluminescence and its excitation, Raman scattering, as well as Atomic Force Microscopy investigations were used to study the photoluminescence mechanism in P-Si. The dependencies of all characteristics on P-Si preparation regimes, the duration of the electrochemical etching process, have been investigated. The influence on the PL spectra of the variation of the excitation light wavelength and storage in vacuum were studied as well. We have shown that the red luminescence band can be decomposed into three elementary bands.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114253185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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