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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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Highly reliable CW strained layer InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW lasers fabricated by MBE MBE制备的高可靠连续波应变层InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW激光器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889533
P. Sajewicz, T. Piwoński, K. Reginski, B. Mroziewicz, M. Bugajski
{"title":"Highly reliable CW strained layer InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW lasers fabricated by MBE","authors":"P. Sajewicz, T. Piwoński, K. Reginski, B. Mroziewicz, M. Bugajski","doi":"10.1109/ASDAM.2000.889533","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889533","url":null,"abstract":"Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980 nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation. Threshold current densities of the order of J/sub th//spl ap/280 A/cm/sup 2/ (for a resonator length L=700 /spl mu/m) and differential efficiency /spl eta/=0.4 W/A (41%) were obtained. The wall-plug efficiency was 38%. Theoretical estimations of these quantities obtained by numerical modelling of devices were J/sub th/=210 A/cm and /spl eta/=0.47 W/A respectively.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116406213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of carrier screening and impurity correlation on the electron and optical properties of doping superlattices 载流子筛选和杂质关联对掺杂超晶格电子和光学性质的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889491
Dmitrii Ushakov, V. Kononenko, I. Manak
{"title":"Influence of carrier screening and impurity correlation on the electron and optical properties of doping superlattices","authors":"Dmitrii Ushakov, V. Kononenko, I. Manak","doi":"10.1109/ASDAM.2000.889491","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889491","url":null,"abstract":"The theoretical analysis of the electron and optical characteristics of doping superlattices is performed in the case of the Gaussian or exponential distributions in the density state tails and taking into account the electrostatic potential screening and band gap narrowing. The influence of the impurity correlations on the screening lengths and characteristic parameters of the density state tails is considered. It is shown that the impurity correlation leads to a fixed value of the diffusivity-mobility ratio, which at the Gaussian-like tails tends to the classical value kT/e.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132597461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical determination of /spl delta/-doping concentration in semiconductor structures 半导体结构中掺杂浓度的光学测定
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889477
A. Babiński, R. Kulawinski, T. Tomaszewicz, J. Baranowski
{"title":"Optical determination of /spl delta/-doping concentration in semiconductor structures","authors":"A. Babiński, R. Kulawinski, T. Tomaszewicz, J. Baranowski","doi":"10.1109/ASDAM.2000.889477","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889477","url":null,"abstract":"The electroreflectance measurements on modulation Si /spl delta/-doped pseudomorphic GaAs/InGaAs/GaAs quantum well at room temperature are presented. Previously proposed Electroreflectance Bias-Wavelength mapping is used for characterisation of investigated structure. The Fourier transform applied to Franz-Keldysh oscillations revealed the value of electric field in the structure. A difference between an electric field above and below the /spl delta/-doping plane was used to find the ionized dopant concentration. The position of the /spl delta/-layer was also obtained from our analysis.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133605778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determination of implanted layer depth in silicon by electrochemical C-V technique 电化学C-V法测定硅中注入层深度
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889509
L. Hulényi, R. Kinder, A. Šatka
{"title":"Determination of implanted layer depth in silicon by electrochemical C-V technique","authors":"L. Hulényi, R. Kinder, A. Šatka","doi":"10.1109/ASDAM.2000.889509","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889509","url":null,"abstract":"A method for determining the carrier concentration profile N(x) and the depth of p/sup +/-n junction boron implanted silicon using the electrochemicaI capacitance-voltage method, and EBIC (electron beam induced current) is presented. The above mentioned methods were found to be suitable for characterizing the implantation process. Experimental results have been compared with theoretical ones based on Gauss N/sub G/(x) and Pearson IV Np(X) distributions and with those obtained by means of EBIC.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128622893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control positioning of torsional electrostatic actuators by current driving 通过电流驱动控制扭转静电致动器的定位
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889457
R. N. Guardia, R. Aigner, W. Nessler, M. Handtmann, L. Castañer
{"title":"Control positioning of torsional electrostatic actuators by current driving","authors":"R. N. Guardia, R. Aigner, W. Nessler, M. Handtmann, L. Castañer","doi":"10.1109/ASDAM.2000.889457","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889457","url":null,"abstract":"In this paper, a novel charge control procedure of the moveable electrode of a torsional electrostatic actuator is presented It is demonstrated that pull-in charge limits the controllable range not only with parasitic capacitances but also without them. Charge is injected into the actuator by means of a switched current source. Current injection is controlled measuring voltage drop on a series capacitance, and a$@flop closing the loop provides the synchronous operation of the system. In fact, the control circuit is a current sigma-delta control.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129165036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Effect of the plasmon-phonon coupling anisotropy on the reflection coefficient of polar semiconductors ZnO and SiC-6H 等离子体-声子耦合各向异性对极性半导体ZnO和SiC-6H反射系数的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889516
E. Venger, S.M. Davidenko, A. Melnichuk, L. Melnichuk, Yu.A. Pasechnik
{"title":"Effect of the plasmon-phonon coupling anisotropy on the reflection coefficient of polar semiconductors ZnO and SiC-6H","authors":"E. Venger, S.M. Davidenko, A. Melnichuk, L. Melnichuk, Yu.A. Pasechnik","doi":"10.1109/ASDAM.2000.889516","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889516","url":null,"abstract":"We present some results of our investigations of the reflection coefficient in the IR spectral region for ZnO and SiC-6H crystals. We account for vibrations of three subsystems that are coupled in pairs, namely: (i) electromagnetic waves, (ii) optical lattice vibrations, and (iii) plasma oscillations of free charge carriers. It is shown that anisotropy of phonons and plasmons leads to a number of peculiarities in both the spectrum of coupled oscillations and transparency regions.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"286 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115955661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of metal-induced low-temperature crystallization of SiO/sub 2/ sol-gel glass containing Ag 含银SiO/ sub2 /溶胶-凝胶玻璃金属诱导低温结晶研究
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889498
M. G. Garnica-Romo, J. González-Hernández, M. Hernandez-Landaverde, Yu.V. Voroblev
{"title":"Investigation of metal-induced low-temperature crystallization of SiO/sub 2/ sol-gel glass containing Ag","authors":"M. G. Garnica-Romo, J. González-Hernández, M. Hernandez-Landaverde, Yu.V. Voroblev","doi":"10.1109/ASDAM.2000.889498","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889498","url":null,"abstract":"The transition of the Ag-doped amorphous SiO/sub 2/ sol-gel produced bulk samples into the crystalline /spl alpha/-crystobalite has been observed during heat treatment at a temperature of 500/spl deg/C, which is much lower than the values reported earlier. For that, silver has to be added to the starting solution in an amount such that it forms aggregates on heat treatment. The other requirement to observe the metal-induced low-temperature crystallization is that the composition of the starting solution (namely, the water-to-TEOS ratio) ought to correspond to some optimal values resulting in samples with an isotropic glass structure. Two possible mechanisms of the effect are discussed; one takes into account the electrostatic screening of the ion's charge by the metal particle surface, and the other considering the interaction of the metal atom with the interatomic bonds of the glass during the diffusion of the atom through the glass. It is shown that both effects lead to local sample heating which could be the reason for the crystallization observed.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115209931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertically arranged microelectrode array for electrochemical sensing 用于电化学传感的垂直排列微电极阵列
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889535
V. Rebacek, I. Novotný, R. Ivanic, V. Breternitz, L. Spieß, C. Knedlik, V. Tvarozek
{"title":"Vertically arranged microelectrode array for electrochemical sensing","authors":"V. Rebacek, I. Novotný, R. Ivanic, V. Breternitz, L. Spieß, C. Knedlik, V. Tvarozek","doi":"10.1109/ASDAM.2000.889535","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889535","url":null,"abstract":"We have developed a thin film cell consisting of a vertically arranged interdigital array (IDA) of electrodes with a continuous Pt-basis and an Y/sub 2/O/sub 3/ insulation layer in the middle separating the upper Pt IDA electrodes. We have optimized the technology of preparation of Y/sub 2/O/sub 3/ thin films with suitable electrical and mechanical properties. The electrochemical cell has been tested by cyclic voltammetry using the redox couple [Fe(CN)/sub 6/]/sup 3-/4-/ in an electrolyte and the redox recycling phenomenon was demonstrated under these conditions.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114322323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of heterojunction properties of the diode temperature sensors on low temperature current transfer and temperature response curves 研究了二极管温度传感器异质结特性对低温电流传递和温度响应曲线的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889543
Yu. M. Shwarts, A. Kondrachuk, M. Shwarts, L.I. Spinar, E. F. Venger
{"title":"The effect of heterojunction properties of the diode temperature sensors on low temperature current transfer and temperature response curves","authors":"Yu. M. Shwarts, A. Kondrachuk, M. Shwarts, L.I. Spinar, E. F. Venger","doi":"10.1109/ASDAM.2000.889543","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889543","url":null,"abstract":"A new type of the silicon cryogenic diode temperature sensors (DTSs) with advanced technical characteristics has been developed on the base of highly doped n/sup ++/-p/sup +/ structures. For expansion of opportunities of the practical applications of the DTSs with the predicted performance characteristics we are experimentally and theoretically investigated the current transfer in the DTSs at helium temperatures. It is proposed that mechanisms of non-ohmic Mott's conductivity in the base of diode and the tunnel-limited current through the heterojunction barrier between the n- and p-parts of the impurity band determine the current-voltage characteristics (CVCs) and the temperature response curves (TRCs) of the DTSs at helium temperatures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115340398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Peculiarities of Raman spectra from porous silicon 多孔硅拉曼光谱的特性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889515
N.E. Korsunskaya, M. Sheĭnkman, M. Valakh, T.V. Torchinskaya, L. Khomenkova, V.A. Yukhimchuk, B. Bulakh, M.K. Dzhumaev, A. Many, Y. Goldstein, E. Savir
{"title":"Peculiarities of Raman spectra from porous silicon","authors":"N.E. Korsunskaya, M. Sheĭnkman, M. Valakh, T.V. Torchinskaya, L. Khomenkova, V.A. Yukhimchuk, B. Bulakh, M.K. Dzhumaev, A. Many, Y. Goldstein, E. Savir","doi":"10.1109/ASDAM.2000.889515","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889515","url":null,"abstract":"The enhancement of the Raman intensity from a porous layer compared to the signal from the silicon substrate was observed. It is assumed that this phenomenon is due to the specific form of pores that leads to the optical effect of focusing of scattered light near the bottom of the macropores. It was shown that the peak position and shape of the Raman line depend on the nanostructure of the pore bottom.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123699965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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