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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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Interference of ballistic electrons in semiconductor nanostructure devices 半导体纳米结构器件中弹道电子的干扰
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889453
T. Figielski, T. Wosifiski, A. Morawski, A. Makosa, Z. Tkaczyk, J. Wróbel, E. Kamihska, E. Papis, A. Piotrowska, R. Nowakowski
{"title":"Interference of ballistic electrons in semiconductor nanostructure devices","authors":"T. Figielski, T. Wosifiski, A. Morawski, A. Makosa, Z. Tkaczyk, J. Wróbel, E. Kamihska, E. Papis, A. Piotrowska, R. Nowakowski","doi":"10.1109/ASDAM.2000.889453","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889453","url":null,"abstract":"We sttidied ballistic tranyiort throiigh a spare pantimi dot defined in a twodimensional electron gas at a C;cyls/AIC;~s-heterosti~ict~~re inlegace by Schottky gates deposited on the top of the heterostrwctiire. We denionstrarc? that the condtrciance of the dot at a low tenperatiire is controlled by qtianttini ititerj2rence of ballistic elccfrons reflected crt the dot sitle-hotittdarie.s, atid cntt be tiincd by U voliugc applied to the gates dejning posiiions of these boundaries.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130107050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ge-film resistance and Si-based diode temperature microsensors 锗膜电阻和硅基二极管温度微传感器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889489
N. S. Boltovets, V.V. Kholevchuk, R. Konakova, V. F. Mitin, E. F. Venger
{"title":"Ge-film resistance and Si-based diode temperature microsensors","authors":"N. S. Boltovets, V.V. Kholevchuk, R. Konakova, V. F. Mitin, E. F. Venger","doi":"10.1109/ASDAM.2000.889489","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889489","url":null,"abstract":"New types of miniature temperature sensors based on Ge films and silicon diodes have been developed and produced. The Ge film microthermometers are intended for use at temperatures from 1 to 400 K, and silicon microdiodes cover operating temperature range from 1 to 600 K. The designs of sensitive elements and the miniature package, as well as sensor characteristics, are presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130291628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable inicrocavity filters and detectors 可调谐的微腔滤波器和探测器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889456
P. Viktorovitch
{"title":"Tunable inicrocavity filters and detectors","authors":"P. Viktorovitch","doi":"10.1109/ASDAM.2000.889456","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889456","url":null,"abstract":"The state of the art of III- V semiconductor based Micro-Opto-Mechanical Systems (MOEMS) is presented with a special emphasis on InP and related materials. It is shown that the MOEMS technology can enhance considerably the capabilities of optical micro-cavities, which are considered as a major component for optical signal processing and light generation. Illustrations of the potential of III- V MOEMS are given in the jields of Optical Telecommunications. Design and fabrication of highly selective and widely tunable optical filters for Wavelength Division Multiplexing Systems are presented. These devices are monolithic and are based on surface micro-machining technology. They combine a variety of very attractive properties such as low control power, low insertion loss, tunability, small bandwidth, no polarization dependence, simple jiber coupling, no memory efects and reasonable tuning speed. Future prospects implying the use of multiair-gap MOEMS structures as a basic building-block for a wide variety of routing photonic devices are proposed : tunable photodetectors are presented as an example.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134020639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of laterally displaced porous silicon filters using different fabrication methods 采用不同制备方法制备横向位移多孔硅滤光片
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889458
M. Marso, M. Wolter, R. Arens-Fischer, P. Kordog, H. Luth
{"title":"Formation of laterally displaced porous silicon filters using different fabrication methods","authors":"M. Marso, M. Wolter, R. Arens-Fischer, P. Kordog, H. Luth","doi":"10.1109/ASDAM.2000.889458","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889458","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115732153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Process optimization and diffusion length evaluation of a new aqueous base developable negative epoxy electron beam resist 一种新型水性可展环氧负极电子束抗蚀剂的工艺优化及扩散长度评价
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889488
N. Glezos, P. Argitis, D. Velessiotis, I. Raptis, P. Hudek, I. Kostic
{"title":"Process optimization and diffusion length evaluation of a new aqueous base developable negative epoxy electron beam resist","authors":"N. Glezos, P. Argitis, D. Velessiotis, I. Raptis, P. Hudek, I. Kostic","doi":"10.1109/ASDAM.2000.889488","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889488","url":null,"abstract":"A new aqueous base developable, chemically amplified negative resist based on epoxy chemistry (ADEPR) is evaluated for high resolution, high-speed e-beam lithography. The acid diffusion coefficient of this system is also evaluated. This resist is formulated using partially hydrogenated poly(hydroxy styrene) and epoxy novolac polymers. The absence of swelling phenomena compared to pure epoxy systems allows lithography up to 100 nm regime and a sensitivity of 4-8 /spl mu/C/cm/sup 2/ at 50 KeV. Both high-resolution line and dot exposures were used in order to evaluate the diffusion coefficient. The value of D=5.10/sup -14/ cm/sup 2//sec fount is a little higher than its pure epoxy counterpart (EPR) but still lower than other commercial resists.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114183770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of dopant diffusion in sige HBTs on the transit frequency 掺杂物扩散对sighbt传输频率的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889449
J. Gebner, R. Kinder, F. Schwierz
{"title":"Influence of dopant diffusion in sige HBTs on the transit frequency","authors":"J. Gebner, R. Kinder, F. Schwierz","doi":"10.1109/ASDAM.2000.889449","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889449","url":null,"abstract":"The influence of boron oufdiJhsion fiom the base, caused by annealing, on the transit frequency is calculaled by means of process and device simulation. The outdiffiision is investigated for two transisitors with different base widths ( w ~ = 4 0 nni and wB=20 nnl) using RTA at several annealing temperatures and an annealing time of 5 seconds. Significant boron outdiflusion starts at annealing temperatures of T=115OoC and T=125OoC, depending on the inifial base width. Therefore the infuence of the outd@ion on the transit frequency up to these temperatures is negligible. For higher annealing temperatures the base widths increase dramatically and the transit frequencies drop down.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114419231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical and detection performance of radiation detector based on bulk semi-insulating InP:Fe: role of detector volume 基于块状半绝缘InP:Fe辐射探测器的电学和探测性能:探测器体积的作用
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889537
B. Zat’ko, F. Dubecký, J. Darmo, P. Euthymiou, V. Nečas, M. Krempaský, M. Sekáčová, D. Korytár, O. Csabay, L. Harmatha, P. Pelfer
{"title":"Electrical and detection performance of radiation detector based on bulk semi-insulating InP:Fe: role of detector volume","authors":"B. Zat’ko, F. Dubecký, J. Darmo, P. Euthymiou, V. Nečas, M. Krempaský, M. Sekáčová, D. Korytár, O. Csabay, L. Harmatha, P. Pelfer","doi":"10.1109/ASDAM.2000.889537","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889537","url":null,"abstract":"In this work study of bulk semi-insulating (SI) InP:Fe-based particle detectors with emphasise to the role of detector volume is presented. Detectors based on three various materials with active contact area between 0.3-5.5 mm/sup 2/ and various base length, 190, 400, and 1830 /spl mu/m were fabricated and tested. Obtained attenuation volume ranges between 0.12 and 5.7 mm/sup 3/. Detection performance of detectors was tested at temperature 230 K. Charge collection efficiency and energy resolution tested using /spl gamma/-ray sources (/sup 241/Am, /sup 57/Co) are demonstrated. Problems of measurement at voltages >1 kV necessary for detectors with long base (>500 /spl mu/m) and architecture of a \"large volume\" radiation detector based on bulk SI InP applicable in detection of solar neutrino are discussed.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117307149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The characterization of laser-deposited thin sensitive layers of gas sensors 激光沉积气体传感器薄敏感层的表征
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889482
M. Vrňata, V. Myslík, F. Vysloužil, M. Jelínek, J. Lančok
{"title":"The characterization of laser-deposited thin sensitive layers of gas sensors","authors":"M. Vrňata, V. Myslík, F. Vysloužil, M. Jelínek, J. Lančok","doi":"10.1109/ASDAM.2000.889482","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889482","url":null,"abstract":"The aim of this work is to investigate the properties of gas sensors with active layers prepared by pulsed laser deposition (PLD) technology. The active layers were deposited on planar sensor chips with interdigital platinum electrodes. The deposition was carried out from tin dioxide (SnO/sub 2/), indium sesquioxide (In/sub 2/O/sub 3/), tin acetylacetonate (SnAcAc) and indium acetylacetonate (InAcAc)-based targets by KrF excimer laser. Our interest was focused on the following problems: detection of hydrogen and ozone, the changes of maximal sensitivity S/sub max/ and the temperature of maximal sensitivity T/sub max/ as a result of using dopants and catalyst, low-temperature of maximal sensitivity T/sub max/ as a result of using dopants and catalyst, low-temperature (about 100/spl deg/C) sensitivities and ac-measurements of sensors (real and imaginary part of complex impedance for different frequencies).","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115766924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of 2DEG in GaAs/InGaP based structures GaAs/InGaP基结构中2DEG的电学性质
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889486
R. Kúdela, M. Morvic, M. Kučera, S. Kicin, J. Novák
{"title":"Electrical properties of 2DEG in GaAs/InGaP based structures","authors":"R. Kúdela, M. Morvic, M. Kučera, S. Kicin, J. Novák","doi":"10.1109/ASDAM.2000.889486","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889486","url":null,"abstract":"Electrical properties of 2DEGs in GaAs/InGaP structures were studied in this paper. The structures were grown by LP MOVPE at various temperatures. The influence of growth temperature and the optimisation of the growth process of interfaces on the Hall mobilities were examinated. Correlations between morphology, optical properties and Hall mobilities at 77 K were observed. The thickness of the spacer, which separated the 2DEG channel from the doping region, had also a significant influence on the mobilities. Properties of the structures with GaAs and InGaAs channels are presented. Hall mobilities of 46000 cm/sup 2/V/sup -1/s/sup -1/ were achieved in the GaAs/InGaP structures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131126615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOVPE growth and characterisation of silicon /spl delta/-doped GaAs, AlAs and Al/sub x/Ga/sub 1-x/As for advanced semiconductor devices 先进半导体器件中硅/spl δ /掺杂GaAs、AlAs和Al/sub x/Ga/sub 1-x/As的MOVPE生长和表征
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889501
B. Ściana, D. Radziewicz, M. Tlaczala, G. Sȩk, M. Nowaczyk, J. Misiewicz
{"title":"MOVPE growth and characterisation of silicon /spl delta/-doped GaAs, AlAs and Al/sub x/Ga/sub 1-x/As for advanced semiconductor devices","authors":"B. Ściana, D. Radziewicz, M. Tlaczala, G. Sȩk, M. Nowaczyk, J. Misiewicz","doi":"10.1109/ASDAM.2000.889501","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889501","url":null,"abstract":"The results of metal organic vapour phase epitaxy (MOVPE) growth and characterisation of silicon /spl delta/-doped GaAs, AlAs and Al/sub 0.35/Ga/sub 0.65/As are presented. All epitaxial structures were grown in an atmospheric pressure horizontal AIX 200 Aixtron reactor. Delta doping was formed by SiH/sub 4/ introduction during the growth interruption. The growth temperature was 670/spl deg/C (for GaAs) and 760/spl deg/C (for AlAs and Al/sub 0.35/Ga/sub 0.65/As). Delta-doping characteristic were investigated using capacitance-voltage (C-V) measurements. The narrowest C-V profile (FWHM/sub C-V/=5.3 nm) was obtained for GaAs grown at 670/spl deg/C. The quality of Si delta-doped structures was also examined using photoreflectance (PR) spectroscopy and X-ray measurements.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116203276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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