Interference of ballistic electrons in semiconductor nanostructure devices

Abstract

We sttidied ballistic tranyiort throiigh a spare pantimi dot defined in a twodimensional electron gas at a C;cyls/AIC;~s-heterosti~ict~~re inlegace by Schottky gates deposited on the top of the heterostrwctiire. We denionstrarc? that the condtrciance of the dot at a low tenperatiire is controlled by qtianttini ititerj2rence of ballistic elccfrons reflected crt the dot sitle-hotittdarie.s, atid cntt be tiincd by U voliugc applied to the gates dejning posiiions of these boundaries.