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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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The influence of defect diffusion under electric field on optical and luminescent characteristics of cadmium sulphide 电场作用下缺陷扩散对硫化镉光学和发光特性的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889478
L.V. Borkovskaya, B.R. Dzhumaev, L. Khomenkova, N.E. Korsunskaya, I. Markevich
{"title":"The influence of defect diffusion under electric field on optical and luminescent characteristics of cadmium sulphide","authors":"L.V. Borkovskaya, B.R. Dzhumaev, L. Khomenkova, N.E. Korsunskaya, I. Markevich","doi":"10.1109/ASDAM.2000.889478","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889478","url":null,"abstract":"Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impurities, copper diffusion being enhanced perpendicular to the c-axis and silver diffusing faster parallel to the c-axis.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115600295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lattice stress gradients in thin films deposited by reactive sputtering 反应溅射沉积薄膜中的晶格应力梯度
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889511
P. Šutta
{"title":"Lattice stress gradients in thin films deposited by reactive sputtering","authors":"P. Šutta","doi":"10.1109/ASDAM.2000.889511","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889511","url":null,"abstract":"Among physical methods for thin films preparation, diode sputtering plays a very important role because almost all materials can be prepared by this technique. Reactive sputtering as a modification of this method is commonly used when preparing oxide and nitride thin films. Using r.f. reactive sputtering methods to obtain ZnO films, compressive stresses arise when a growing film is bombarded by energetic atoms or ions. A simple method to determine the lattice stress gradients in ZnO films by using the X-ray diffraction analysis of asymmetric line profiles is presented. The lattice stress gradient in ZnO films depends on the substrate temperature applied during the deposition and on the other conditions as substrate material used or on the ordering of layers in multilayered structures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127525797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermal annealing of AuPt Schottky contacts on GaAs and AlGaAs GaAs和AlGaAs上AuPt Schottky触点的热退火
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889469
P. Machac
{"title":"Thermal annealing of AuPt Schottky contacts on GaAs and AlGaAs","authors":"P. Machac","doi":"10.1109/ASDAM.2000.889469","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889469","url":null,"abstract":"The thermal stability of AuPt Schottky contacts on n-GaAs and n-AlGaAs epitaxial layers is investigated. The thermal treatment has been carried out by RTA apparatus for 45 s up to 615/spl deg/C. The AuPt Schottky contacts on GaAs are found to remain thermally stable after annealing up to 520/spl deg/C, the optimal parameters have been obtained at 415/spl deg/C. The present example shows the possibility to use the Schottky contacts as MSM photodetectors with the sensitivity of 1.7 A/W. The AuPt metallization at the AlGaAs wafers has shown poor parameters.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122742593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy 气源分子束外延生长Si(Ge)/Si/sub - 1-x/Ge/sub -x结构中氢化物热解表面过程动力学及界面附近合金混溶问题
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889476
L.K. Orlov, N.L. Ivina, A. Potapov, S.V. Ivin
{"title":"Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy","authors":"L.K. Orlov, N.L. Ivina, A. Potapov, S.V. Ivin","doi":"10.1109/ASDAM.2000.889476","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889476","url":null,"abstract":"The key reasons behind spreading of a solid solution near the interfaces of a Si layer in Si/Si/sub 1-x/Ge/sub x/ heterostructures grown by the gas source molecular beam epitaxy are considered. The growth kinetics is studied and the efficiency of the Ge atoms spreading near the interfaces of layers is compared for two situations without atomic flows in the reactor and in their presence (the latter being known as the \"hot wire\" techniques in one of which a sublimating silicon bar is used for an additional heated element). Structures grown in different methods are analysed for the role of various, mechanisms underlying formation of the profile of the interface of a layer. The spreading of the Si transport channel boundaries is estimated.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114299849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mid-infrared semiconductor lasers 中红外半导体激光器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889460
T. Šimeček, E. Hulicius, J. Oswald, J. Pangrác, P. Čapek, K. Heime, A. Behres, A. Joullie, P. Christol
{"title":"Mid-infrared semiconductor lasers","authors":"T. Šimeček, E. Hulicius, J. Oswald, J. Pangrác, P. Čapek, K. Heime, A. Behres, A. Joullie, P. Christol","doi":"10.1109/ASDAM.2000.889460","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889460","url":null,"abstract":"For mid-infrared semiconductor lasers the most important goal is to overcome the nonradiative recombination processes and to improve the important laser parameters, including temperature dependence of the threshold current, maximum attainable optical power, spectral purity and lifetime expectancy, Recently several new physical concepts have been adopted, bringing a couple of major improvements with theJinal solution being still ahead of us.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130531994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Temperature dependence simulation of electrophysical properties of silicon carbide 碳化硅电物理性质的温度依赖性模拟
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889504
O.A. Agueev, A. M. Svetlichny, D.A. Izotovs, A. Melnikov, A.B. Voronko
{"title":"Temperature dependence simulation of electrophysical properties of silicon carbide","authors":"O.A. Agueev, A. M. Svetlichny, D.A. Izotovs, A. Melnikov, A.B. Voronko","doi":"10.1109/ASDAM.2000.889504","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889504","url":null,"abstract":"At this work was calculated the temperature dependences of Fermi level situation, carrier concentration and conductivity in SiC polytypes (3C, 4H, 6H) for different impurities concentration and type of conductivity for the wide temperature range. The calculations were carried out with the help of numerical solution of equation electroneutrality. We took into account the multicharging of impurities and compensating impurity influence. The results of calculations helped to make precise temperature dependences of Fermi level situation, carrier concentration and conductivity of SiC and to raise calculations accuracy for simulation characteristics of SiC of electronic devices and analyse experimental data of CV characteristics, DLTS and noise diagnostics.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123369586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Resonant cavity LED with InAs/GaAs active region 具有InAs/GaAs有源区的谐振腔LED
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889468
J. Kvietkova, J. Kovác, B. Rheinlander, S. Hardt, V. Gottschalch, M. Biaho, J. Jakabovic, J. Skrinjarova
{"title":"Resonant cavity LED with InAs/GaAs active region","authors":"J. Kvietkova, J. Kovác, B. Rheinlander, S. Hardt, V. Gottschalch, M. Biaho, J. Jakabovic, J. Skrinjarova","doi":"10.1109/ASDAM.2000.889468","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889468","url":null,"abstract":"We present a resonant cavity LED with an InAs monolayer active region embedded in an AlAs/AlGaAs vertical resonant cavity. In comparison to the structures without a resonator but with the same active region the realized resonant cavity LED exhibited enhanced external quantum efficiency and decreased linewidth. Using the monolayer active region allows a wavelength redshift of the emission spectrum of more than 45 nm while keeping the external quantum efficiency and linewidth at approximately the same value as for the resonant cavity LED with monolayer-free active region.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123603159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lifetime engineering in high-power devices 大功率器件的寿命工程
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889445
J. Vobecký
{"title":"Lifetime engineering in high-power devices","authors":"J. Vobecký","doi":"10.1109/ASDAM.2000.889445","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889445","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130931375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On a control of photon-surface plasmon coupling at a multilayer diffraction grating 多层衍射光栅中光子-表面等离子体耦合的控制
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889541
N. Dmitruk, O.I. Mayeva, S. Mamykin, O. Yastrubchak
{"title":"On a control of photon-surface plasmon coupling at a multilayer diffraction grating","authors":"N. Dmitruk, O.I. Mayeva, S. Mamykin, O. Yastrubchak","doi":"10.1109/ASDAM.2000.889541","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889541","url":null,"abstract":"This article is devoted to investigation of multilayer diffraction grating using spectroscopic ellipsometry. The present study demonstrates the capability of techniques used as a tool to obtain information about the possibilities to control of photon-surface plasmon coupling at a multilayer diffraction gratings and usefulness especially for optochemical sensors and photodetectors application.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123491208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Advanced silicon diode temperature sensors with minimized self-heating and noise for cryogenic applications 先进的硅二极管温度传感器，最大限度地减少自加热和噪音的低温应用
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889518
Yu. M. Shwarts, V. Sokolov, M. Shwarts, I. Fedorov, E. F. Venger
{"title":"Advanced silicon diode temperature sensors with minimized self-heating and noise for cryogenic applications","authors":"Yu. M. Shwarts, V. Sokolov, M. Shwarts, I. Fedorov, E. F. Venger","doi":"10.1109/ASDAM.2000.889518","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889518","url":null,"abstract":"Original results are presented on the development of new stable and reproducible silicon diode temperature sensors (DTSs), characterized by high interchangeability, with the temperature response curve controlled by the current. For these sensors, in a broadened range of temperatures 4.2-500 K, the influence of Joule heating and p-n junction noise on the accuracy of temperature measurement has been minimized. The results of theoretical and experimental investigations are presented concerning the contributions of different currents to the sensor characteristics that allow the DTS performance to be optimized. The limiting values of temperature measurement uncertainty for the DTSs have been established. The advanced DTSs are intended for the range of low to middle temperatures and have record technical characteristics for cryogenic applications.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129675148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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