GaAs和AlGaAs上AuPt Schottky触点的热退火

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889469

P. Machac

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引用次数: 1

摘要

研究了n-GaAs和n-AlGaAs外延层上AuPt肖特基触点的热稳定性。用RTA仪对其进行热处理，温度为615/spl℃，热处理时间为45s。结果表明，GaAs上的AuPt Schottky触点在520/spl℃退火后仍保持热稳定性，在415/spl℃退火时获得了最佳参数。本例显示了使用肖特基触点作为MSM光电探测器的可能性，其灵敏度为1.7 A/W。AlGaAs晶片上的AuPt金属化表现出较差的参数。

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Thermal annealing of AuPt Schottky contacts on GaAs and AlGaAs

The thermal stability of AuPt Schottky contacts on n-GaAs and n-AlGaAs epitaxial layers is investigated. The thermal treatment has been carried out by RTA apparatus for 45 s up to 615/spl deg/C. The AuPt Schottky contacts on GaAs are found to remain thermally stable after annealing up to 520/spl deg/C, the optimal parameters have been obtained at 415/spl deg/C. The present example shows the possibility to use the Schottky contacts as MSM photodetectors with the sensitivity of 1.7 A/W. The AuPt metallization at the AlGaAs wafers has shown poor parameters.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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