电场作用下缺陷扩散对硫化镉光学和发光特性的影响

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889478

L.V. Borkovskaya, B.R. Dzhumaev, L. Khomenkova, N.E. Korsunskaya, I. Markevich

{"title":"电场作用下缺陷扩散对硫化镉光学和发光特性的影响","authors":"L.V. Borkovskaya, B.R. Dzhumaev, L. Khomenkova, N.E. Korsunskaya, I. Markevich","doi":"10.1109/ASDAM.2000.889478","DOIUrl":null,"url":null,"abstract":"Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impurities, copper diffusion being enhanced perpendicular to the c-axis and silver diffusing faster parallel to the c-axis.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of defect diffusion under electric field on optical and luminescent characteristics of cadmium sulphide\",\"authors\":\"L.V. Borkovskaya, B.R. Dzhumaev, L. Khomenkova, N.E. Korsunskaya, I. Markevich\",\"doi\":\"10.1109/ASDAM.2000.889478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impurities, copper diffusion being enhanced perpendicular to the c-axis and silver diffusing faster parallel to the c-axis.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"189 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

观察了Cu和Ag在CdS晶体中的掺入及其在电场作用下的萃取。研究了这些过程引起的发光光谱和吸收光谱的变化。两种杂质均具有明显的扩散各向异性，铜在垂直于c轴方向的扩散增强，银在平行于c轴方向的扩散更快。

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The influence of defect diffusion under electric field on optical and luminescent characteristics of cadmium sulphide

Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impurities, copper diffusion being enhanced perpendicular to the c-axis and silver diffusing faster parallel to the c-axis.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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