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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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Investigation of interface formation and charge properties of MIS structures Al-Dy/sub x/O/sub y/-n-InP(100) MIS结构Al-Dy/sub x/O/sub y/-n-InP的界面形成和电荷性质研究(100)
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889520
N. Babushkina, S. Malyshev, L.N. Bykova, L. Romanova
{"title":"Investigation of interface formation and charge properties of MIS structures Al-Dy/sub x/O/sub y/-n-InP(100)","authors":"N. Babushkina, S. Malyshev, L.N. Bykova, L. Romanova","doi":"10.1109/ASDAM.2000.889520","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889520","url":null,"abstract":"Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122814953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum size InAs/GaAs lasers-preparation and properties 量子尺寸InAs/GaAs激光器的制备及其性能
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889524
E. Hulicius, P. Hazdra, J. Voves, J. Oswald, J. Pangrác, K. Melichar, M. Vancura, O. Petříček, T. Šimeček
{"title":"Quantum size InAs/GaAs lasers-preparation and properties","authors":"E. Hulicius, P. Hazdra, J. Voves, J. Oswald, J. Pangrác, K. Melichar, M. Vancura, O. Petříček, T. Šimeček","doi":"10.1109/ASDAM.2000.889524","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889524","url":null,"abstract":"Semiconductor lasers based on quantum dots or very thin InAs strained quantum wells have been intensively studied during the last few years. The advantage of a zero-dimensional structure lies in its /spl square/-function density of states but this is devalued by the large fluctuation of the size and shape of quantum dots. However, the higher electroluminescence efficiency and higher working temperature remain. That is why the use of very thin strained quantum wells can be a reasonable compromise for the preparation of highly efficient lasers emitting near 1 /spl mu/m. In this paper, we report the preparation and parameters of laser structures based on very thin strained single and multiple quantum wells working at room and elevated temperatures. The WA characteristics, threshold current density and efficiency of these lasers were studied in the temperature range from 10 K to 370 K.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124795770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Long wavelength (1.02-1.03 /spl mu/m) InGaAs/GaAs lasers fabricated by MBE MBE制备长波(1.02-1.03 /spl mu/m) InGaAs/GaAs激光器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889534
T. Piwoński, P. Sajewicz, J. M. Kubica, K. Reginski, B. Mroziewicz, M. Bugajski
{"title":"Long wavelength (1.02-1.03 /spl mu/m) InGaAs/GaAs lasers fabricated by MBE","authors":"T. Piwoński, P. Sajewicz, J. M. Kubica, K. Reginski, B. Mroziewicz, M. Bugajski","doi":"10.1109/ASDAM.2000.889534","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889534","url":null,"abstract":"The operation of InGaAs/GaAs SCH SQW lasers emitting at the wavelength 1.02-1.03 /spl mu/m, fabricated by MBE technology, is reported. Longer wavelength of emission was achieved by applying high indium content in the active region. The paper presents characteristics of fabricated structures measured at room temperature (T=300 K) under pulsed operation. The results are promising and give hope for fabricating structures emitting at 1.06 /spl mu/m, which in some applications could replace diode pumped Nd:YAG lasers.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131569672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts 金属聚合物/p型Si肖特基触点的电流-电压和电容-电压特性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889494
M. Çakar, M. Sadlam, Y. Onganer, Z. Horváth, A. Turut
{"title":"Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts","authors":"M. Çakar, M. Sadlam, Y. Onganer, Z. Horváth, A. Turut","doi":"10.1109/ASDAM.2000.889494","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889494","url":null,"abstract":"Metallic polypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131795756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical and structural characterization of NiO thin films for gas detection 用于气体检测的NiO薄膜的物理和结构表征
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889513
J. Kremmer, I. Hotovy, V. Rehacek, J. Široký, L. Spieß, J. Schawohl
{"title":"Physical and structural characterization of NiO thin films for gas detection","authors":"J. Kremmer, I. Hotovy, V. Rehacek, J. Široký, L. Spieß, J. Schawohl","doi":"10.1109/ASDAM.2000.889513","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889513","url":null,"abstract":"We have studied physical and structural properties of NiO thin films produced by reactive DC magnetron sputtering of a Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The thin film deposition was controlled by the target voltage. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02. The NiO thin films were tested in order to investigate their response to NH/sub 3/ and CO in the interval 50-200 ppm at the different operating temperatures. The maximum value of CO response (30% to 200 ppm) was obtained at an operating temperature of 420/spl deg/C for sample prepared in oxide-sputtering mode.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131819595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical silicon MOSFETs based on selective epitaxial growth 基于选择性外延生长的垂直硅mosfet
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889454
J. Moers, A. Tonnesmann, D. Klaes, L. Vescan, A. van der Hart, A. Fox, M. Marso, P. Kordos, H. Luth
{"title":"Vertical silicon MOSFETs based on selective epitaxial growth","authors":"J. Moers, A. Tonnesmann, D. Klaes, L. Vescan, A. van der Hart, A. Fox, M. Marso, P. Kordos, H. Luth","doi":"10.1109/ASDAM.2000.889454","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889454","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132101440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Effect of thermal annealing and high-power microwave radiation on characteristics of combined resonant tunneling structures 热退火和大功率微波辐射对复合谐振隧道结构特性的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889544
A. Belyaev, N. S. Boltovets, R. Konakova, E. Soloviev, D. Sheka, B. Podor, É. Badalyan, S. Vitusevich
{"title":"Effect of thermal annealing and high-power microwave radiation on characteristics of combined resonant tunneling structures","authors":"A. Belyaev, N. S. Boltovets, R. Konakova, E. Soloviev, D. Sheka, B. Podor, É. Badalyan, S. Vitusevich","doi":"10.1109/ASDAM.2000.889544","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889544","url":null,"abstract":"The effects of microwave treatment on the current transport mechanisms in tunneling diode with coupled delta-doped layers are studied. To separate thermal effects from those having electromagnetic origin the experiments with short thermal annealing of the samples have been made. It is shown that two processes occur under action of power electromagnetic field. In the beginning the quantum-sized well is spread due to diffusion of impurities from the delta layer induced by electric field. In further the accumulation of generation-recombination centers occurs within the space charge region that leads to considerable growth of the excess current.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125610163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Morphology and electrical behaviour of Pd/sub 2/Si/p-Si junctions Pd/sub /Si/p-Si结的形态和电学行为
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889496
Z. Horváth, J. Kumar, L. Dobos, B. Pécz, A. Tóth, S. Chand, J. Karányi
{"title":"Morphology and electrical behaviour of Pd/sub 2/Si/p-Si junctions","authors":"Z. Horváth, J. Kumar, L. Dobos, B. Pécz, A. Tóth, S. Chand, J. Karányi","doi":"10.1109/ASDAM.2000.889496","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889496","url":null,"abstract":"Dendrite like morphology was observed in Pd/sub 2/Si/p-Si junctions. The obtained high ideality factors and the significant difference between the apparent barrier heights evaluated from the current-voltage and capacitance-voltage measurements are explained on the basis of this morphology.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127385628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hot-carrier effects in 0.15/spl mu/m low dose SIMOX N-MOSFETs 0.15/spl mu/m低剂量SIMOX n - mosfet中的热载子效应
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889452
P. Dimitrakis, J. Jornaah, F. Balestra, G. Papaioannou
{"title":"Hot-carrier effects in 0.15/spl mu/m low dose SIMOX N-MOSFETs","authors":"P. Dimitrakis, J. Jornaah, F. Balestra, G. Papaioannou","doi":"10.1109/ASDAM.2000.889452","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889452","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126677512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of polycrystalline diamond-films for low field electron emission 用于低场电子发射的多晶金刚石薄膜的生长
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889483
V. Malcher, A. Kromka, J. Janı́k, V. Dúbravcová
{"title":"Growth of polycrystalline diamond-films for low field electron emission","authors":"V. Malcher, A. Kromka, J. Janı́k, V. Dúbravcová","doi":"10.1109/ASDAM.2000.889483","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889483","url":null,"abstract":"The potential for using diamond as a negative electron affinity (NEA) material was recognized by Himpsel et al. in 1979 and makes CVD diamond a promising candidate for cold-cathode applications and field emission displays. The current work shows one promising approach to utilize a double bias-assisted hot filament chemical vapor deposition (HFCVD) method for diamond growth. Selected area deposition of diamond films on tungsten wires is successfully achieved in the HFCVD system. Diamond tungsten wires show good electron field emission properties, that is, emission current density J/sub c/=2000 /spl mu/A/cm/sup 2/ (under 23.6 V//spl mu/m) and turn on field of F/sub 0/=12 V//spl mu/m. The effective work function (/spl Phi/) estimated by Fowler-Nordheim plot of the I-V characteristics is /spl Phi/=0.058 eV. The influence of different growth conditions on film quality has been investigated by micro-Raman measurements and optical microscopy.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129594158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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