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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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Delta-doped layer influence on Schottky diodes parameters δ掺杂层对肖特基二极管参数的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889528
J. Osvald
{"title":"Delta-doped layer influence on Schottky diodes parameters","authors":"J. Osvald","doi":"10.1109/ASDAM.2000.889528","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889528","url":null,"abstract":"We studied the influence of planar /spl delta/-doping on the parameters of Schottky diodes. It is shown that a /spl delta/-layer with the same type of conductivity as a base semiconductor material has no significant influence on the diode parameters. Changing the potential barrier shape after insertion of the /spl delta/-doped layer influences the diode current only slightly. Significant changes were found for Schottky diodes with /spl delta/-doped layers of opposite type conductivity compared with the base semiconductor. The resulting barriers are higher and depend on both the /spl delta/-doped layer position and the doping concentration.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126392738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Proton irradiation effects on the electric field behavior in particle detectors 质子辐照对粒子探测器中电场行为的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889473
A. Castaldini, A. Cavallini, L. Polenta, C. Canali, F. Nava
{"title":"Proton irradiation effects on the electric field behavior in particle detectors","authors":"A. Castaldini, A. Cavallini, L. Polenta, C. Canali, F. Nava","doi":"10.1109/ASDAM.2000.889473","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889473","url":null,"abstract":"The behavior of the electric field E and of the active layer width W in particle detectors are of major importance from the point of view of both the fundamental physics and the detector technological improvement. At present, it is still an open question how E and W change by irradiating the detectors with high-energy particles. This paper deals a thorough investigation on the behavior of E and W before and after irradiation carried out in silicon pin diodes as well as in gallium arsenide Schottky diodes by optical-beam-induced current (OBIC) and Surface Potential (SP) measurements. For both kinds of detectors the results are discussed relating them to the radiation-induced deep levels which have been detected by junction spectroscopy.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122721571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scanning probe microsystems 扫描探针微系统
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889455
I. Rangelow
{"title":"Scanning probe microsystems","authors":"I. Rangelow","doi":"10.1109/ASDAM.2000.889455","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889455","url":null,"abstract":"In this article we summarize attempts devoted to the realization of our inspirations for development of Scanning Probe Microsystems applied in scanning probe microscopy. The Microsystem consists microcantilever with integrated tip, oscillator, and cantilever deflection sensor. The presented here Microsystem scenario allows for formation of d$\"t systems with the same piezoresistive deflection detector, but particulur tip-sensor for sensing dr3erent physicaUchemical values. In this way we designed and fabricated as a basic element, piezoresistive cantilever, which enables surface topography measurements with resolution of 0. Innr. A conductive tip isolatedfrom the cantilever was introduced to obtain microdevice for scanning capacitance microscopy and scanning tunnelling microscopy. With this microprobe we measured capacitance between the micro-tip and the sut$ace in the range of 10°F. Furthermore, a modification of the piezoresistors placement, permits jabrication of the multipurpose systems for lateral force microscopy, which enables measurements offriction forces with the resolution of InN. Based on the 'bimetallic' principe of actuation occurring by the temperature variations cantilever fenrtocalorimeter for detection of heat energy in the range of SOnW/Hz(-O.S) was developed The calorimeter contains also a thin Jlm metal microheater table. It serves possibility to determine the Infrared Radiation absorbed by the sensor and energy andpg mass changes induced by chemical reactions in the chemical& sensitive coating.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133433046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of INGAAs/GAAs photodetectors with ALAs/GAAS nanolayers
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889462
I. Zborowska-Lindert, D. Radziewicz, B. Boratyński, B. Ściana, S. Patela, M. Tlaczala
{"title":"Investigation of INGAAs/GAAs photodetectors with ALAs/GAAS nanolayers","authors":"I. Zborowska-Lindert, D. Radziewicz, B. Boratyński, B. Ściana, S. Patela, M. Tlaczala","doi":"10.1109/ASDAM.2000.889462","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889462","url":null,"abstract":"The results of investigation of two types of resonant cavity enhanced (RCE) photodetectors PIN and MSM are presented. The structures were designed for wavelength range of870nni I OOOnin; thus the In,GalJs absorption layer with proper composition of indium has been used as am active layer. All structures have been fabricated using Metal Organic Vapour Phase Epitaxy (MO VPE) growth on GaAs substrates with dflerent buffer and matching layer conjguration. For design of the photodeteclor of selective wavelength the resonant cmiily has been fornred with the use oJa Bragg reflector structure consisting oJ 10 pairs of AIAs/GaAs (76/GS.Snn,). The active InGaAs layer was deposited in one process on all substrates with different AIAs/GaAs namolayers conJguration. The device structures were fabricated using a standard W I C processing.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"43 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130838365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal stability of Pt/doping element/Pd ohmic contacts to GaAs Pt/掺杂元素/Pd与砷化镓欧姆接触的热稳定性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889523
P. Machac, V. Myslík
{"title":"Thermal stability of Pt/doping element/Pd ohmic contacts to GaAs","authors":"P. Machac, V. Myslík","doi":"10.1109/ASDAM.2000.889523","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889523","url":null,"abstract":"The thermal stability of Pt/doping element/Pd ohmic contacts with Ge, Si and Sn in the position of doping elements was investigated. Three sets of metallization differentiated by the thickness of particular layers were prepared with help of high vacuum evaporation or sputtering. The Pt(50 nm)/Pt(50 nm)/Si(40 nm)/Pd(10 nm) metallization deposited by sputtering shows the best stability. The changes in the contact resistivity in the process of ageing are not due to phase transformations at the semiconductor-metallization interface, but are probably caused by the doping element-GaAs interdiffusion.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"49 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130867354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the measurement of high resistance semiconductors by the van der Pauw method 用范德波法测量高阻半导体
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889512
M. Morvic
{"title":"On the measurement of high resistance semiconductors by the van der Pauw method","authors":"M. Morvic","doi":"10.1109/ASDAM.2000.889512","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889512","url":null,"abstract":"We measured transport parameters of semiinsulating (SI) and low temperature (LT) GaAs using the van der Pauw method. A detailed procedure for semiinsulating sample preparation and for obtaining reliable experimental data is given. The advantage of using a constant voltage source instead of a constant current source is demonstrated in the case of high resistivity semiconductor materials.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133031353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Ridge-waveguide InAs/GaAs lasers 脊波导InAs/GaAs激光器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889464
L. Kuna, F. Uherek, J. Kovác, J. Jakabovic, V. Gottschalch, B. Rheinlander
{"title":"Ridge-waveguide InAs/GaAs lasers","authors":"L. Kuna, F. Uherek, J. Kovác, J. Jakabovic, V. Gottschalch, B. Rheinlander","doi":"10.1109/ASDAM.2000.889464","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889464","url":null,"abstract":"We report on the reduction of current spreading of InAs/GaAs lasers by using ridge-waveguide geometry. For the investigation of current spreading, lasers with various ridge widths 5, 10, 20 and 50 /spl mu/m are prepared. The laser properties are experimentally studied by the light output versus current characteristics (L-I) and near field patterns (NFP). Threshold current densities (J/sub th/) as a function of ridge width are compared to oxide-stripe geometry lasers with the same material structure. Finally, lasers with ridge-waveguide geometry show a reduction of total J/sub th/ for all ridge widths. Furthermore, the fundamental zero-order mode TEM/sub 00/ is achieved for 10 /spl mu/m ridge width.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"133 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114100167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-resistivity silicon p-i-n diodes for detection of ionising radiation 用于检测电离辐射的高电阻硅p-i-n二极管
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889545
W. Słysz, L. Ryć, M. Węgrzecki
{"title":"High-resistivity silicon p-i-n diodes for detection of ionising radiation","authors":"W. Słysz, L. Ryć, M. Węgrzecki","doi":"10.1109/ASDAM.2000.889545","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889545","url":null,"abstract":"Silicon p-i-n photodiodes for measuring nuclear radiation, with a large surface area (5/spl times/5 mm/sup 2/), a thick (380 /spl mu/m) active layer and a very thin dead layer (0.13 /spl mu/m), have been fabricated by diffusion from a boron doped silicon layer (BDS). The photodiodes have been tested using /spl alpha/-particles from /sup 241/Am and X-rays from laser plasmas.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117119444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gan-based electronics: material and device issues 氮化镓电子学:材料和器件问题
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889450
P. Kordos
{"title":"Gan-based electronics: material and device issues","authors":"P. Kordos","doi":"10.1109/ASDAM.2000.889450","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889450","url":null,"abstract":"Key issues related to the material structure and device processing of AlGaN/GaN HEMTs for applications in high-frequency and high-power electronics are discussed. Simultaneously results on selected issues like highly resistive GaN birffers, AlGaN/GaN 2DEG structures, low-resistive ohniic contacts and efJicierzt Schottky barrier contacts, as well as photoelectrocheniical wet etching of GaN are presented. Finally, preparation and properties of the AlGaN/GaN RoundHEMT, which is a simple device suitable for fast material structure characterization, are presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123931882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Computer technology, subliminal enticement, and the collectivisation of ethics 计算机技术、潜意识诱惑和伦理集体化
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889446
F. Birrer
{"title":"Computer technology, subliminal enticement, and the collectivisation of ethics","authors":"F. Birrer","doi":"10.1109/ASDAM.2000.889446","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889446","url":null,"abstract":"For a significant part, computer ethics is an ethics for computer professionals. As such, it belongs to the more general category of expert ethics. Due to growing social complexity and interconnectedness in general, and in the realm of science, technology and expertise in particular, the effort needed to identify ethical choices has risen equally. Rather than being immediately identifiable as such, ethical choices often take the form of subliminal enticement. Classical approaches, like deontology, teleology or virtue ethics fail to capture this, because they are not sufficiently equipped, to deal with change and with the possibility of self-deception. For an up to date professional ethics, a broader reflexivity is needed that includes reflection on the social processes in which actors are embedded. Ethics then can be conceived as a form of collective quality control. One of the analytical tools that can be used for this purpose is argumentation analysis. Other tools can be adapted from the systems sciences. Subliminal enticement bares some resemblance to Habermas' colonisation of the life world, but stripped of some of its more problematic connotations.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124137219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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