High-resistivity silicon p-i-n diodes for detection of ionising radiation

Abstract

Silicon p-i-n photodiodes for measuring nuclear radiation, with a large surface area (5/spl times/5 mm/sup 2/), a thick (380 /spl mu/m) active layer and a very thin dead layer (0.13 /spl mu/m), have been fabricated by diffusion from a boron doped silicon layer (BDS). The photodiodes have been tested using /spl alpha/-particles from /sup 241/Am and X-rays from laser plasmas.