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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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Schottky barrier as a diagnostic tool for evaluating properties of InP epitaxial layers prepared from melts containing rare-earth elements 肖特基势垒作为评价稀土熔体制备的InP外延层性能的诊断工具
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889480
O. Procházková, F. Šrobár, F. Jelinek, J. Šaroch, K. Žd’ánský
{"title":"Schottky barrier as a diagnostic tool for evaluating properties of InP epitaxial layers prepared from melts containing rare-earth elements","authors":"O. Procházková, F. Šrobár, F. Jelinek, J. Šaroch, K. Žd’ánský","doi":"10.1109/ASDAM.2000.889480","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889480","url":null,"abstract":"InP layers are prepared by the liquid-phase epitaxial process from melts containing erbium. Even though the rare-earth atoms generally do not enter the InP host lattice to form optically active centres, they may have pronounced influence due to their high chemical activity in removing residual impurities. Properties of Schottky diodes manufactured from InP:Er layers are compared with those of diodes prepared under otherwise similar conditions but without the admixture of Er in the growth solution. Presence of erbium in the preparation process was found to have beneficial effects on both the reverse and forward current magnitudes and on the diode ideality factor. Capability of Schottky diodes to generate higher-order harmonics in suitably configured circuits was also investigated.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126429433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical response time of InGaAs(P)/InP photodiodes InGaAs(P)/InP光电二极管的光响应时间
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889536
F. Uherek, D. Haško, J. Chovan
{"title":"Optical response time of InGaAs(P)/InP photodiodes","authors":"F. Uherek, D. Haško, J. Chovan","doi":"10.1109/ASDAM.2000.889536","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889536","url":null,"abstract":"Speed of response of InGaAs(P)/InP based photodiodes has been analysed with structure parameters and as a function of bias voltage. It is shown that there exists a strong dependence of response time on the valence band discontinuities at the heterointerface InGaAs(P)/InP in the SAM photodiode structure (pile-up effect). The graded InGaAsP layer between absorption layer InGaAsP and InP multiplication layer in photodiode structure can successfully reduce this effect. The best measured InGaAs(P)/InP photodiodes have rise time and fall time at bias voltage 5-10 V better than 400 ps.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129351341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Intersubband absorption in /spl delta/-doped GaInAs-InP multi quantum wells /spl δ /掺杂GaInAs-InP多量子阱的子带间吸收
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889526
T. Klaffs, A. Ivanov, A. Bakin, Dirk Piester, M. Ursu, A. Schlachetzki, L. Hvozdara, G. Strasser, B. Guttler
{"title":"Intersubband absorption in /spl delta/-doped GaInAs-InP multi quantum wells","authors":"T. Klaffs, A. Ivanov, A. Bakin, Dirk Piester, M. Ursu, A. Schlachetzki, L. Hvozdara, G. Strasser, B. Guttler","doi":"10.1109/ASDAM.2000.889526","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889526","url":null,"abstract":"We report on intersubband absorption in lattice-matched Ga/sub 0.47/In/sub 0.53/As multi quantum well structures. Four /spl delta/-doped samples were grown by metalorganic vapour-phase epitaxy, the well-thickness varying between 5 and 11 nm. Experimental results are presented for bound-to-bound and bound-to-continuum transitions. The measured intersubband transition energies are in very good agreement with an effective-mass-approximation model including nonparabolicity effects.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132353239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High quality SiGe epitaxial layer grown by RPCVD using dichlorosilane 用二氯硅烷制备高质量的锗外延层
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889481
C. Menon, H. H. Radamson, G. Landgren
{"title":"High quality SiGe epitaxial layer grown by RPCVD using dichlorosilane","authors":"C. Menon, H. H. Radamson, G. Landgren","doi":"10.1109/ASDAM.2000.889481","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889481","url":null,"abstract":"The evolution of defect density in non-selective Si/SiGe structures grown with SiH/sub 2/Cl/sub 2/ as Si source has been studied. High-resolution reciprocal lattice mapping has been performed to characterize the epitaxial quality of the layers. The surface morphology and the density of dislocations were also investigated by using atomic force microscopy. The results showed that a minimum defect density could be obtained for a certain SiH/sub 2/Cl/sub 2/ partial pressure. A high partial pressure of SiH/sub 2/Cl/sub 2/ results in a large amount of Cl-based molecules, which saturates the growth rate. A low partial pressure of SiH/sub 2/Cl/sub 2/ causes a too low growth rate and the incorporation of impurities in Si lattice increases. Both the above cases lead to a poor epitaxial quality and an optimum value can be obtained in the transit between these two regions in the growth rate vs. SiH/sub 2/Cl/sub 2/ partial pressure diagram. Applying the optimized SiH/sub 2/Cl/sub 2/ partial pressure value to grow Si/SiGe layers on the patterned substrate causes a higher defect density than on blanket substrates, which also increases with decreasing the size of the oxide-openings. This is due to injection of the defects from the poly Si/SiGe into the single crystalline region.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132201660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The new mechanism for obtaining of the steep nonlinearities in the modern semiconductor structure 现代半导体结构中陡非线性获得的新机制
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889542
A. Korol, O. Tretyak, D. Sheka
{"title":"The new mechanism for obtaining of the steep nonlinearities in the modern semiconductor structure","authors":"A. Korol, O. Tretyak, D. Sheka","doi":"10.1109/ASDAM.2000.889542","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889542","url":null,"abstract":"The current-voltage characteristics of the semiconductor structure: the Schottky barrier (SB) incorporating the double barrier resonant-tunnelling structure, are evaluated and analysed. Since the SE can block (unblock) the resonant-tunnelling currents effectively enough the both very sharp and strong enhancement of the current is observed for the forward bias. For the backbiased structure considered, the region of the negative differential resistance takes place. The shape of the current-voltage curves depends on the parameters of the problem essentially.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"37 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133616238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of current transport in highly doped semiconductor structures including the tunneling effect 高掺杂半导体结构中包括隧道效应的电流输运模拟
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889447
J. Racko, V. Drobny, D. Donoval
{"title":"Simulation of current transport in highly doped semiconductor structures including the tunneling effect","authors":"J. Racko, V. Drobny, D. Donoval","doi":"10.1109/ASDAM.2000.889447","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889447","url":null,"abstract":"Novel semiconductor struclures with shrinking dimensions and increasing doping result in veiy steep interfaces. The implementation of quantum mechanical effects into the compact model characterizing the current flow is a necessity and considerably contributes to the siniulation of various non-standard effects. Thus the analysis of the dependence of the properties of a tunnel diode on the actual doping profile of the structure is straightfonard. In a tunneling diode with an abrupt doping profile, tunneling through the p+-n' junction is likely to be the dominant mechanism which controls the current flow through the interface. Simulation based on the drift-diffusion approximation is unable to give the corresponding electrical characteristics and results [ 1-71. Various complex analytical models describing the tunneling effect have been developed [8-91 but usually they do not take into account the whole complexity of mutual interactions of different mechanisms of the current flow through the interface. Therefore in our approach the tunneling effect is introduced into the simulator via modification of a general generation-recombination term. The resulting compact formula characterizing the total current flow includes the drift and diffusion, Shockley-Hall-Read generation and recombination, Auger recombination, impact ionization and tunneling as well as the mutual interactions of the mentioned mechanisms of current flow. The properties of the modified simulator were verified by its application to the simulation of the I-V properties of tunnel diodes with different doping profiles and the contribution of the tunneling current to the total current is clearly demonstrated. 2. Theory Adding the tunneling mechanism via an additional generation - recombination term into the current continuity equations modifies the classical drift-diffusion model of the simulation of electrical properties of semiconductor devices. We can then write","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"73 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123156692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An extended model for soft breakdown in ultra-thin SiO/sub 2/ films 超薄SiO/ sub2 /薄膜软击穿的扩展模型
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889475
S. Okhonin, P. Fazan, E. Baskin, G. Guégan, S. Delenibus, F. Martin
{"title":"An extended model for soft breakdown in ultra-thin SiO/sub 2/ films","authors":"S. Okhonin, P. Fazan, E. Baskin, G. Guégan, S. Delenibus, F. Martin","doi":"10.1109/ASDAM.2000.889475","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889475","url":null,"abstract":"This paper presents a complete picture of soft breakdown (SBD) including the behavior of conduction and valence band currents. This picture relies on trap-assisted inelastic conduction through deep traps. New electron energy loss data after SBD strongly support the model we also report an energy loss of 0.8 eV for SILC-electrons in 3.6 nm oxide film.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"253 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117313291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study 侵略性缩放伪晶hemt的性能:蒙特卡罗模拟研究
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889451
K. Kalna, A. Asenov, K. Elgaid, I. Thayne
{"title":"Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study","authors":"K. Kalna, A. Asenov, K. Elgaid, I. Thayne","doi":"10.1109/ASDAM.2000.889451","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889451","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115647299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes 界面粗糙度和形貌对Au/n-GaAs肖特基二极管电学行为的影响
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889495
Z. Horváth, O.V. Rengevich, S. Mamykin, N. Dmitruk, V. Van Tuyen, B. Szentpáli, R. Konakova, A. Belyaev
{"title":"Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes","authors":"Z. Horváth, O.V. Rengevich, S. Mamykin, N. Dmitruk, V. Van Tuyen, B. Szentpáli, R. Konakova, A. Belyaev","doi":"10.1109/ASDAM.2000.889495","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889495","url":null,"abstract":"The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129447972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the electrical properties of undoped gallium arsenide epitaxial layers 未掺杂砷化镓外延层的电学性质研究
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889503
Z. Synowiec, D. Radziewicz, I. Zborowska-Lindert
{"title":"Investigation of the electrical properties of undoped gallium arsenide epitaxial layers","authors":"Z. Synowiec, D. Radziewicz, I. Zborowska-Lindert","doi":"10.1109/ASDAM.2000.889503","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889503","url":null,"abstract":"In this investigation we have measured the electron concentration n=7/spl times/10/sup 15/ cm/sup -3/ in the undoped epitaxial GaAs layer grown on the well conducting GaAs substrate, I-V characteristic resistance of the Schottky junction formed in that layer and we have evaluated layer resistivity /spl rho/=0.2 /spl Omega/ cm, barrier potential /spl phi/=0.785 V, ideality factor /spl eta/=1.08 and series resistance R/sub s/=5 /spl Omega/ of the Schottky junction. Then we have measured I-V characteristic between the coplanar ohmic contact formed on the undoped epitaxial GaAs layer grown on SI GaAs substrate and we have evaluated breakdown electric field E/sub T/=1.5 kV/cm, sheet resistivity R/sub s/=10/sup 9/ /spl Omega//0, and layer resistivity /spl rho/=5/spl times/10/sup 4/ /spl Omega/ cm.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127214891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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