Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes

Abstract

The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.