An extended model for soft breakdown in ultra-thin SiO/sub 2/ films

Abstract

This paper presents a complete picture of soft breakdown (SBD) including the behavior of conduction and valence band currents. This picture relies on trap-assisted inelastic conduction through deep traps. New electron energy loss data after SBD strongly support the model we also report an energy loss of 0.8 eV for SILC-electrons in 3.6 nm oxide film.