The new mechanism for obtaining of the steep nonlinearities in the modern semiconductor structure

Abstract

The current-voltage characteristics of the semiconductor structure: the Schottky barrier (SB) incorporating the double barrier resonant-tunnelling structure, are evaluated and analysed. Since the SE can block (unblock) the resonant-tunnelling currents effectively enough the both very sharp and strong enhancement of the current is observed for the forward bias. For the backbiased structure considered, the region of the negative differential resistance takes place. The shape of the current-voltage curves depends on the parameters of the problem essentially.