/spl δ /掺杂GaInAs-InP多量子阱的子带间吸收

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889526

T. Klaffs, A. Ivanov, A. Bakin, Dirk Piester, M. Ursu, A. Schlachetzki, L. Hvozdara, G. Strasser, B. Guttler

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摘要

本文报道了晶格匹配的Ga/sub 0.47/ in /sub 0.53/As多量子阱结构的子带间吸收。采用金属有机气相外延法生长了4个/spl δ /掺杂样品，井厚在5 ~ 11 nm之间。给出了结合到结合和结合到连续体转变的实验结果。测量的子带间跃迁能量与包含非抛物线效应的有效质量近似模型非常吻合。

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Intersubband absorption in /spl delta/-doped GaInAs-InP multi quantum wells

We report on intersubband absorption in lattice-matched Ga/sub 0.47/In/sub 0.53/As multi quantum well structures. Four /spl delta/-doped samples were grown by metalorganic vapour-phase epitaxy, the well-thickness varying between 5 and 11 nm. Experimental results are presented for bound-to-bound and bound-to-continuum transitions. The measured intersubband transition energies are in very good agreement with an effective-mass-approximation model including nonparabolicity effects.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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