Z. Horváth, O.V. Rengevich, S. Mamykin, N. Dmitruk, V. Van Tuyen, B. Szentpáli, R. Konakova, A. Belyaev
{"title":"界面粗糙度和形貌对Au/n-GaAs肖特基二极管电学行为的影响","authors":"Z. Horváth, O.V. Rengevich, S. Mamykin, N. Dmitruk, V. Van Tuyen, B. Szentpáli, R. Konakova, A. Belyaev","doi":"10.1109/ASDAM.2000.889495","DOIUrl":null,"url":null,"abstract":"The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes\",\"authors\":\"Z. Horváth, O.V. Rengevich, S. Mamykin, N. Dmitruk, V. Van Tuyen, B. Szentpáli, R. Konakova, A. Belyaev\",\"doi\":\"10.1109/ASDAM.2000.889495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889495\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes
The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures.