发布求助
文献互助 智能选刊 最新文献

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

筛选
英文 中文
Photoenhanced wet etching of gallium nitride for gate recessing 用于栅极凹槽的氮化镓光增强湿法蚀刻
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889443
J. Škriniarová, A. Fox, P. Bochem, P. Kordos
{"title":"Photoenhanced wet etching of gallium nitride for gate recessing","authors":"J. Škriniarová, A. Fox, P. Bochem, P. Kordos","doi":"10.1109/ASDAM.2000.889443","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889443","url":null,"abstract":"Results on the photoelectrochemical etching of GaN are presented. The irlfluence of a KOH-based etchant concentration and an UV-light intensity has been studied with an emphasis on the resulting etched surface quality. We have defined the conditions that likely meet the gate recess requirements using an etching rate of 20-25 rindmin. The quality of the recessed surface and its roughness are presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130607337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anodic alumina based electrostatic micro-relay MEMS device 基于阳极氧化铝的静电微继电器MEMS器件
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889522
G. I. Efremov, N. Mukhurov, V. Kovalevsky
{"title":"Anodic alumina based electrostatic micro-relay MEMS device","authors":"G. I. Efremov, N. Mukhurov, V. Kovalevsky","doi":"10.1109/ASDAM.2000.889522","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889522","url":null,"abstract":"The electrostatic micro-relay version described consists of a basic substrate and a plate with an elastic movable anchor formed of anodic alumina connected rigidly to each other. The correlation between electrostatic and reactive mechanical forces is given for the dynamic operation mode. This correlation could be applied to calculate movable elements of electrostatic micro-relays of analogous designs using other materials.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131168851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermodynamic complexity measure for semiconductor heterostructures 半导体异质结构的热力学复杂性测量
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889485
F. Šrobár
{"title":"Thermodynamic complexity measure for semiconductor heterostructures","authors":"F. Šrobár","doi":"10.1109/ASDAM.2000.889485","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889485","url":null,"abstract":"Semiconductor chips in contemporary microelectronics and optoelectronics are complicated objects, There may be various approaches to express their complexity. The one presented in this paper, suitable in the first place to multiple-layer heterostructures, is based on the thermodynamic notion of the entropy of mixing. This complexity measure, termed the configuration entropy /spl Delta/S/sub conf/, is a functional depending on the concentration profile x(Z) and the layer growth law d(t). Of particular interest can be the configuration entropy production rate P/sub conf//spl equiv/dS/sub conf//dt. Theoretical concepts are illustrated on the concrete case of the growth of a double heterostructure in the AlGaAs material system.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"34 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132237732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defective state analysis in silicon carbide 碳化硅缺陷态分析
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889472
A. Castaldini, A. Cavallini, L. Polenta, F. Nava, C. Canali, C. Lanzieri
{"title":"Defective state analysis in silicon carbide","authors":"A. Castaldini, A. Cavallini, L. Polenta, F. Nava, C. Canali, C. Lanzieri","doi":"10.1109/ASDAM.2000.889472","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889472","url":null,"abstract":"Native or process-induced defective states may significantly affect the transport properties of silicon carbide. It is then of fundamental importance to detect them and, possibly, to identify their origin. This paper deals with the defect analysis of silicon carbide using capacitance transient spectroscopy. Electrical characterization can evaluate transport mechanisms and diode quality. Deep levels found can be ascribed to impurities introduced during growth and metallization.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121950446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Ionized-PVD by pulsed sputtering of Ta for metallization of high-aspect-ratio structures in VLSI 用脉冲溅射Ta的电离pvd用于超大规模集成电路中高宽高比结构的金属化
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889479
U. Helmersson, Z. Khan, J. Alami
{"title":"Ionized-PVD by pulsed sputtering of Ta for metallization of high-aspect-ratio structures in VLSI","authors":"U. Helmersson, Z. Khan, J. Alami","doi":"10.1109/ASDAM.2000.889479","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889479","url":null,"abstract":"Ionized metal deposition can be obtained from a magnetron source when using a pulsed power supply with extremely high power in the pulses. We have used peak power densities of several kW cm/sup -2/ with a repetition frequency of 50 Hz. To avoid overheating of the larger and the magnetron, a duty factor of less than 1% was used. The pulsed sputtering technique was employed for deposition of Ta thin films. The sputtering results in a very dense plasma with the ionized fraction of the deposited Ta flux arriving at a substrate (50 cm away from the source) estimated to be 60% or more (for P/sub Ar/=0.13 Pa and pulse energies /spl ges/6 J). This should be compared to normal dc sputtering where the degree of ionization could not be detected (<5%). This pulsed sputtering technique has a great potential for many industrial applications. One example is front-end metallization integrated circuits with high-aspect-ratio structures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127770718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Optical properties of GaAs based layers characterised by Raman spectroscopy and photoluminescence 用拉曼光谱和光致发光表征GaAs基层的光学性质
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889507
R. Srnánek, A. Vincze, D. Mcphail, S. Littlewood, A. Kromka, L. Janos
{"title":"Optical properties of GaAs based layers characterised by Raman spectroscopy and photoluminescence","authors":"R. Srnánek, A. Vincze, D. Mcphail, S. Littlewood, A. Kromka, L. Janos","doi":"10.1109/ASDAM.2000.889507","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889507","url":null,"abstract":"GaAs structures were studied by micro-Raman spectroscopy on chemically bevelled samples. We determined the thickness of the layers, quality of the interfaces the presence of impurities (mainly carbon) in the layers, which cause compensation of free carriers. The results were compared with Hall, photoluminescence and SIMS measurements. From the room temperature photoluminescence measurements we were able to identify the peak position and the band gap of the layers. The low temperature PL shows the incorporated impurities. Our results shows a high level of C and O impurities incorporated to the lattice, which we need to avoid for the development of optoelectronic devices.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance of GaAs photoconductive detectors fabricated from different starting materials 不同起始材料制备的砷化镓光导探测器的性能
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889532
L. Ryć, B. Surma, F. Dubecký, L. Dobrzański, A. Hruban, S. Strzelecka, J. Dresner
{"title":"Performance of GaAs photoconductive detectors fabricated from different starting materials","authors":"L. Ryć, B. Surma, F. Dubecký, L. Dobrzański, A. Hruban, S. Strzelecka, J. Dresner","doi":"10.1109/ASDAM.2000.889532","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889532","url":null,"abstract":"Four GaAs photoconducting detectors of the same geometry but from different starting materials (of various producers) have been fabricated and then examined for fast response with the use of pulsed excitation of different duration in the optical and X-ray ranges of radiation. Some new techniques have been used for measuring the time characteristics.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114838938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaN/GaN heterostructures for UV photodetector applications 用于紫外光电探测器的AlGaN/GaN异质结构
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889500
B. Boratyński, R. Paszkiewicz, B. Paszkiewicz, B. Jankowski, M. Tlaczala
{"title":"AlGaN/GaN heterostructures for UV photodetector applications","authors":"B. Boratyński, R. Paszkiewicz, B. Paszkiewicz, B. Jankowski, M. Tlaczala","doi":"10.1109/ASDAM.2000.889500","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889500","url":null,"abstract":"Metalorganic vapour phase epitaxy (MOVPE) process parameters of Al/sub x/Ga/sub 1-x/N (0<x<0.3) layers grown on c-oriented sapphire substrates were optimised from the point of view of their application in photoconductive and MSM type photodetectors. The low temperature AlN was used as a nucleation layer. The layers' electrical properties were determined by C-V measurements performed in the range 5 Hz-13 MHz with a HP 4192A impedance meter using a mercury probe. The optical characterisation of Al/sub x/Ga/sub 1-x/N was performed by photoluminescence measurement at liquid He and room temperature. The aluminium mole fraction in the layers was determined and compared to the results derived from X-ray diffraction measurements. The photoconductive detectors were fabricated with Ti/Al/Ni/Au ohmic contacts. The I-V characteristics were taken and the photoresponse of the detectors was measured.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128660213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature dependent electrical characteristics of silicide/silicon junctions 硅化物/硅结的温度相关电特性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889448
Z. Horváth, D. Donoval, G. Pető, G. Molnár, V. Van Tuyen
{"title":"Temperature dependent electrical characteristics of silicide/silicon junctions","authors":"Z. Horváth, D. Donoval, G. Pető, G. Molnár, V. Van Tuyen","doi":"10.1109/ASDAM.2000.889448","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889448","url":null,"abstract":"MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theovy depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSilSi junctions, while it is due to the lateral inhomogeneity ofthe jurrction in the GdCoSi/Si junctions.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128289299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth and characterization of RuO/sub 2/ films prepared by reactive unbalanced magnetron sputtering 反应不平衡磁控溅射制备的RuO/ sub2 /薄膜的生长和表征
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889546
D. Búc, D. Music, U. Helmersson
{"title":"Growth and characterization of RuO/sub 2/ films prepared by reactive unbalanced magnetron sputtering","authors":"D. Búc, D. Music, U. Helmersson","doi":"10.1109/ASDAM.2000.889546","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889546","url":null,"abstract":"We prepared RuO/sub 2/ thin films on Si substrates by reactive unbalanced magnetron sputtering in Ar+O/sub 2/ mixtures using a planar round ruthenium target of 50 mm diameter. Films were sputtered in the constant voltage mode at a power of 100 W, total pressures in the range from 0.2 to 10 Pa and partial pressure of O/sub 2/ from 0 to 80% at temperatures up to 600/spl deg/C and negative bias voltage. We investigated the crystallographic nature of films by X-ray diffraction. EDX measurements confirmed the presence of Ru and O in films, RBS measurements revealed changes of composition with bias voltage. It was found that there were changes of structure, electrical and mechanical properties with the oxygen flow ratio, temperature and substrate bias voltage. Nanoindentation measurements were utilised for evaluation of the hardness and reduced modulus of films.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122584577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信