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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)最新文献

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Study of diamond films prepared by hot filament chemical vapor deposition 热丝化学气相沉积制备金刚石薄膜的研究
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889505
A. Kromka, V. Malcher, J. Janı́k, V. Dúbravcová, A. Šatka, I. Cerven
{"title":"Study of diamond films prepared by hot filament chemical vapor deposition","authors":"A. Kromka, V. Malcher, J. Janı́k, V. Dúbravcová, A. Šatka, I. Cerven","doi":"10.1109/ASDAM.2000.889505","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889505","url":null,"abstract":"A systematic study of growth rate and quality of polycrystalline diamond films by synthesized by hybrid hot filament chemical vapor deposition (HF CVD) in dependence on growth conditions is carried out by Raman spectroscopy and X-ray diffraction measurements. Films grown at the substrate temperature of 600/spl deg/C show a good quality in sense of micro-Raman spectroscopy. The X-ray diffraction patterns revealed the change in preferential grain crystallographic orientation from [100] to [111] as a results of increased substrate temperature. The surface features of deposited films varied from rectangularto triangular-like structures. The growth rate increased form 0.42 to 0.58 /spl mu/m/h with increasing temperature form 600 to 900/spl deg/C for positively biased substrate. The growth rate is also dependent on substrate biasing. The influence of hybrid HFCVD method on possible lowering of activation energy down to 2.51 kcal/mol is presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115521425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Powerful V - channel phototransistor 强大的V通道光电晶体管
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889461
A. N. Shmyryeva, T. V. Semikina
{"title":"Powerful V - channel phototransistor","authors":"A. N. Shmyryeva, T. V. Semikina","doi":"10.1109/ASDAM.2000.889461","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889461","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121293477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Possibilities of quantitative Makyoh topography 量化Makyoh地形的可能性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889484
F. Riesz, I. Lukács
{"title":"Possibilities of quantitative Makyoh topography","authors":"F. Riesz, I. Lukács","doi":"10.1109/ASDAM.2000.889484","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889484","url":null,"abstract":"Geometrical optical approaches to the reconstruction of surface topography from their Makyoh images are reviewed. A simple numerical algorithm is proposed for one-dimensional (1D) reconstruction. For the 2D case, the use of structured illumination is shown, and tentative results of an iterative algorithm are presented. Advantages and limitations of each method are discussed.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"309 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115955648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Semi-insulating InP detectors for solar neutrino experiments 用于太阳中微子实验的半绝缘InP探测器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889459
P. Pelfer, F. Dubecký, R. Fornari, M. Pikna, E. Gombia, B. Zaťko, J. Darmo, M. Krempaský, M. Sekáčová
{"title":"Semi-insulating InP detectors for solar neutrino experiments","authors":"P. Pelfer, F. Dubecký, R. Fornari, M. Pikna, E. Gombia, B. Zaťko, J. Darmo, M. Krempaský, M. Sekáčová","doi":"10.1109/ASDAM.2000.889459","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889459","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123631450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coordinate sensitive photodetectors based on InGaAs/InP heterostructures 基于InGaAs/InP异质结构的坐标灵敏光电探测器
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889531
E. Budeanu, I. Grozescu, M. Purica, E. Rusu, S. V. Slobodchikov
{"title":"Coordinate sensitive photodetectors based on InGaAs/InP heterostructures","authors":"E. Budeanu, I. Grozescu, M. Purica, E. Rusu, S. V. Slobodchikov","doi":"10.1109/ASDAM.2000.889531","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889531","url":null,"abstract":"The dependence of the longitudinal photo-e.m.f. in In/sub 0.53/Ga/sub 0.47/As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V/sub phl/=f(x) has been observed and the V/sub phl/ temperature dependence in the 100-300 K range is determined by the carrier mobility change. A quadrant p-i-n photodiode based on an InP/InGaAs/InP heterostructure was fabricated and its electrical characteristics studied. The photodetector shows wide spectral characteristics (0.9-1.7 /spl mu/m) with a responsivity of each element of 0.62 A/W and a slope of the inversion characteristics of K=(0.8-1.0) 10/sup 3/ V/W.mm.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122367158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si 射频等离子体辅助分子束外延生长氮化镓的材料特性
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889442
M. Androulidaki, K. Amimer, K. Tsagaraki, M. Kayambaki, S. Mikroulis, G. Constantinidis, Z. Hatzopoulos, A. Georgakilas
{"title":"Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si","authors":"M. Androulidaki, K. Amimer, K. Tsagaraki, M. Kayambaki, S. Mikroulis, G. Constantinidis, Z. Hatzopoulos, A. Georgakilas","doi":"10.1109/ASDAM.2000.889442","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889442","url":null,"abstract":"GaN films were grown on Si (1 11) substrates by nitrogen rf plasma source molecular beam epilaxy. Reflection high-energy diffraction (RHEED), atomic force inicroscopy, infrared transmittance and photoluminescence results characterized the properties of GaN f i l m grown under d$fireni in-situ substrate preparation and growth initiation methods. Very smooth surfaces, exhibiting surface recons~ruction in RHEED, were achieved by using an AlN buffer layer. However, these films produced weak photoluminescence, compared to that of the GaN layers directly deyosiied on a reconsiructed 7x7 Si (1 11) surface.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"479 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123229476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transversal photovoltage in heterostructure and Schottky contact 异质结构中的横向光电压与肖特基接触
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889539
L. V. Shekhovtsov
{"title":"Transversal photovoltage in heterostructure and Schottky contact","authors":"L. V. Shekhovtsov","doi":"10.1109/ASDAM.2000.889539","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889539","url":null,"abstract":"We have investigated the transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for the Ge-GaAs heterostructure and NbN-GaAs Schottky contact is determined by the interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples changes the interaction between the photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to obtain the characteristics of the interface uniformity in composite semiconductor structures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114144204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Homoepitaxy of GaN - growth, investigations and applications GaN的同外延生长、研究与应用
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889441
I.M. Baranowski, A. Wysmołek
{"title":"Homoepitaxy of GaN - growth, investigations and applications","authors":"I.M. Baranowski, A. Wysmołek","doi":"10.1109/ASDAM.2000.889441","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889441","url":null,"abstract":"","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"263 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129298237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the origin of interface induced charge density in ionized cluster beam deposited metal-semiconductor systems 离子化簇束沉积金属-半导体系统中界面感应电荷密度的来源
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889465
D. Korosak, B. Cvikl
{"title":"On the origin of interface induced charge density in ionized cluster beam deposited metal-semiconductor systems","authors":"D. Korosak, B. Cvikl","doi":"10.1109/ASDAM.2000.889465","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889465","url":null,"abstract":"The disordered interface electronic structure of ICB deposited Schottky structure is calculated using simple models for the metal and semiconductor. It is shown that the origin of the capacitance measurement detected bias dependent charge density can be ascribed to the presence of the disorder induced continuum of the electron states in the semiconductor energy gap and its coupling with the incorporated metal impurity states at the interface between the disordered interlayer and the regular semiconductor.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134537252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling and characterization of microwave p-i-n photodiode 微波p-i-n光电二极管的建模与表征
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI: 10.1109/ASDAM.2000.889490
A. Chizh, S. Malyshev
{"title":"Modeling and characterization of microwave p-i-n photodiode","authors":"A. Chizh, S. Malyshev","doi":"10.1109/ASDAM.2000.889490","DOIUrl":"https://doi.org/10.1109/ASDAM.2000.889490","url":null,"abstract":"A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the influence of an external electric circuit and parasitic elements is presented. S/sub 11/ parameters of the photodiode are theoretically and experimentally investigated under illumination and in the frequency range up to 4 GHz. The theoretical data well correspond to the measured characteristics of the photodiode. This model can be used in the design of p-i-n photodiodes operating in microwave circuits.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"10 18","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133224000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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