微波p-i-n光电二极管的建模与表征

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889490

A. Chizh, S. Malyshev

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引用次数: 7

摘要

基于InP/InGaAs/InGaAsP异质结构，建立了考虑外电路和寄生元件影响的p-i-n光电二极管的一维漂移扩散数值模型。对光电二极管的S/sub / 11参数进行了理论和实验研究。理论数据与光电二极管的实测特性很好地吻合。该模型可用于微波电路中p-i-n光电二极管的设计。

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Modeling and characterization of microwave p-i-n photodiode

A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the influence of an external electric circuit and parasitic elements is presented. S/sub 11/ parameters of the photodiode are theoretically and experimentally investigated under illumination and in the frequency range up to 4 GHz. The theoretical data well correspond to the measured characteristics of the photodiode. This model can be used in the design of p-i-n photodiodes operating in microwave circuits.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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