Study of diamond films prepared by hot filament chemical vapor deposition

A. Kromka, V. Malcher, J. Janı́k, V. Dúbravcová, A. Šatka, I. Cerven
{"title":"Study of diamond films prepared by hot filament chemical vapor deposition","authors":"A. Kromka, V. Malcher, J. Janı́k, V. Dúbravcová, A. Šatka, I. Cerven","doi":"10.1109/ASDAM.2000.889505","DOIUrl":null,"url":null,"abstract":"A systematic study of growth rate and quality of polycrystalline diamond films by synthesized by hybrid hot filament chemical vapor deposition (HF CVD) in dependence on growth conditions is carried out by Raman spectroscopy and X-ray diffraction measurements. Films grown at the substrate temperature of 600/spl deg/C show a good quality in sense of micro-Raman spectroscopy. The X-ray diffraction patterns revealed the change in preferential grain crystallographic orientation from [100] to [111] as a results of increased substrate temperature. The surface features of deposited films varied from rectangularto triangular-like structures. The growth rate increased form 0.42 to 0.58 /spl mu/m/h with increasing temperature form 600 to 900/spl deg/C for positively biased substrate. The growth rate is also dependent on substrate biasing. The influence of hybrid HFCVD method on possible lowering of activation energy down to 2.51 kcal/mol is presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A systematic study of growth rate and quality of polycrystalline diamond films by synthesized by hybrid hot filament chemical vapor deposition (HF CVD) in dependence on growth conditions is carried out by Raman spectroscopy and X-ray diffraction measurements. Films grown at the substrate temperature of 600/spl deg/C show a good quality in sense of micro-Raman spectroscopy. The X-ray diffraction patterns revealed the change in preferential grain crystallographic orientation from [100] to [111] as a results of increased substrate temperature. The surface features of deposited films varied from rectangularto triangular-like structures. The growth rate increased form 0.42 to 0.58 /spl mu/m/h with increasing temperature form 600 to 900/spl deg/C for positively biased substrate. The growth rate is also dependent on substrate biasing. The influence of hybrid HFCVD method on possible lowering of activation energy down to 2.51 kcal/mol is presented.
热丝化学气相沉积制备金刚石薄膜的研究
利用拉曼光谱和x射线衍射测量系统地研究了混合热丝化学气相沉积(HF CVD)制备的多晶金刚石薄膜的生长速率和质量与生长条件的关系。在衬底温度为600/spl℃时生长的薄膜在微拉曼光谱意义上表现出良好的质量。x射线衍射图显示,随着衬底温度的升高,晶粒择优取向从[100]到[111]发生了变化。沉积膜的表面特征从矩形结构到三角形结构不等。当温度从600℃升高到900℃时,正偏置基质的生长速率从0.42增加到0.58 /spl mu/m/h。生长速率也取决于衬底偏置。介绍了混合HFCVD法对将活化能降低到2.51 kcal/mol的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信