异质结构中的横向光电压与肖特基接触

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889539

L. V. Shekhovtsov

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引用次数: 0

摘要

本文研究了调制照明在半导体异质结构中产生的横向光电压。Ge-GaAs异质结构和NbN-GaAs肖特基接触的光电压谱曲线的复杂形式是由流动在体和界面附近的光电流相互作用决定的。样品的额外无调制照明改变了光电流之间的相互作用。这导致了光电压谱曲线的修正。对它们的特性进行分析，可以得到复合半导体结构中界面均匀性的特性。

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Transversal photovoltage in heterostructure and Schottky contact

We have investigated the transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for the Ge-GaAs heterostructure and NbN-GaAs Schottky contact is determined by the interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples changes the interaction between the photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to obtain the characteristics of the interface uniformity in composite semiconductor structures.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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