硅化物/硅结的温度相关电特性

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889448

Z. Horváth, D. Donoval, G. Pető, G. Molnár, V. Van Tuyen

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摘要

在80 ~ 360 K的温度范围内对MoSi/Si和GdCoSi/Si结进行了I-V测量。热离子发射理论的理想因子和视势垒高度取决于温度。结果表明，这种行为是由于MoSilSi结中异常高水平的热场发射对电流的支配，而这是由于GdCoSi/Si结中的侧向不均匀性造成的。

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Temperature dependent electrical characteristics of silicide/silicon junctions

MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theovy depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSilSi junctions, while it is due to the lateral inhomogeneity ofthe jurrction in the GdCoSi/Si junctions.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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