用于栅极凹槽的氮化镓光增强湿法蚀刻

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889443

J. Škriniarová, A. Fox, P. Bochem, P. Kordos

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引用次数: 0

摘要

介绍了氮化镓光电腐蚀的研究结果。研究了koh基蚀刻剂浓度和紫外光强度对蚀刻表面质量的影响。我们已经定义了可能满足栅极凹槽要求的条件，使用20-25 rindmin的蚀刻速率。介绍了凹坑表面的质量及其粗糙度。

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Photoenhanced wet etching of gallium nitride for gate recessing

Results on the photoelectrochemical etching of GaN are presented. The irlfluence of a KOH-based etchant concentration and an UV-light intensity has been studied with an emphasis on the resulting etched surface quality. We have defined the conditions that likely meet the gate recess requirements using an etching rate of 20-25 rindmin. The quality of the recessed surface and its roughness are presented.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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