A. Castaldini, A. Cavallini, L. Polenta, F. Nava, C. Canali, C. Lanzieri
{"title":"碳化硅缺陷态分析","authors":"A. Castaldini, A. Cavallini, L. Polenta, F. Nava, C. Canali, C. Lanzieri","doi":"10.1109/ASDAM.2000.889472","DOIUrl":null,"url":null,"abstract":"Native or process-induced defective states may significantly affect the transport properties of silicon carbide. It is then of fundamental importance to detect them and, possibly, to identify their origin. This paper deals with the defect analysis of silicon carbide using capacitance transient spectroscopy. Electrical characterization can evaluate transport mechanisms and diode quality. Deep levels found can be ascribed to impurities introduced during growth and metallization.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Defective state analysis in silicon carbide\",\"authors\":\"A. Castaldini, A. Cavallini, L. Polenta, F. Nava, C. Canali, C. Lanzieri\",\"doi\":\"10.1109/ASDAM.2000.889472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Native or process-induced defective states may significantly affect the transport properties of silicon carbide. It is then of fundamental importance to detect them and, possibly, to identify their origin. This paper deals with the defect analysis of silicon carbide using capacitance transient spectroscopy. Electrical characterization can evaluate transport mechanisms and diode quality. Deep levels found can be ascribed to impurities introduced during growth and metallization.\",\"PeriodicalId\":303962,\"journal\":{\"name\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2000.889472\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889472","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Native or process-induced defective states may significantly affect the transport properties of silicon carbide. It is then of fundamental importance to detect them and, possibly, to identify their origin. This paper deals with the defect analysis of silicon carbide using capacitance transient spectroscopy. Electrical characterization can evaluate transport mechanisms and diode quality. Deep levels found can be ascribed to impurities introduced during growth and metallization.
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