Temperature dependent electrical characteristics of silicide/silicon junctions

Abstract

MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theovy depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSilSi junctions, while it is due to the lateral inhomogeneity ofthe jurrction in the GdCoSi/Si junctions.