超薄SiO/ sub2 /薄膜软击穿的扩展模型

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889475

S. Okhonin, P. Fazan, E. Baskin, G. Guégan, S. Delenibus, F. Martin

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摘要

本文介绍了软击穿(SBD)的全貌，包括传导和价带电流的行为。这幅图依赖于深阱辅助的非弹性传导。SBD后的新电子能量损失数据有力地支持了该模型，我们还报道了3.6 nm氧化膜中silc电子的能量损失为0.8 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An extended model for soft breakdown in ultra-thin SiO/sub 2/ films

This paper presents a complete picture of soft breakdown (SBD) including the behavior of conduction and valence band currents. This picture relies on trap-assisted inelastic conduction through deep traps. New electron energy loss data after SBD strongly support the model we also report an energy loss of 0.8 eV for SILC-electrons in 3.6 nm oxide film.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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