未掺杂砷化镓外延层的电学性质研究

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889503

Z. Synowiec, D. Radziewicz, I. Zborowska-Lindert

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引用次数: 1

摘要

在本研究中，我们测量了在导电良好的GaAs衬底上生长的未掺杂外延GaAs层的电子浓度n=7/spl times/10/sup 15/ cm/sup -3/，在该层中形成的肖特基结的I-V特性电阻，并评估了肖特基结的层电阻率/spl rho/=0.2 /spl Omega/ cm，势垒势/spl phi/=0.785 V，理想因子/spl eta/=1.08和系列电阻R/sub /=5 /spl Omega/。然后，我们测量了在SI GaAs衬底上生长的未掺杂外延GaAs层上形成的共面欧姆接触之间的I-V特性，并计算了击穿电场E/sub T/=1.5 kV/cm，片电阻率R/sub s/=10/sup 9/ /spl Omega//0，层电阻率/spl rho/=5/spl × /10/sup 4/ /spl Omega/ cm。

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Investigation of the electrical properties of undoped gallium arsenide epitaxial layers

In this investigation we have measured the electron concentration n=7/spl times/10/sup 15/ cm/sup -3/ in the undoped epitaxial GaAs layer grown on the well conducting GaAs substrate, I-V characteristic resistance of the Schottky junction formed in that layer and we have evaluated layer resistivity /spl rho/=0.2 /spl Omega/ cm, barrier potential /spl phi/=0.785 V, ideality factor /spl eta/=1.08 and series resistance R/sub s/=5 /spl Omega/ of the Schottky junction. Then we have measured I-V characteristic between the coplanar ohmic contact formed on the undoped epitaxial GaAs layer grown on SI GaAs substrate and we have evaluated breakdown electric field E/sub T/=1.5 kV/cm, sheet resistivity R/sub s/=10/sup 9/ /spl Omega//0, and layer resistivity /spl rho/=5/spl times/10/sup 4/ /spl Omega/ cm.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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