InGaAs(P)/InP光电二极管的光响应时间

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889536

F. Uherek, D. Haško, J. Chovan

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引用次数: 2

摘要

分析了InGaAs(P)/InP基光电二极管的响应速度与结构参数和偏置电压的关系。结果表明，在SAM光电二极管结构中，InGaAs(P)/InP异质界面处的价带不连续对响应时间有很强的依赖性(堆积效应)。在光电二极管结构中，在吸收层InGaAsP和InP倍增层之间的梯度InGaAsP层可以成功地降低这种影响。测得的InGaAs(P)/InP光电二极管在偏置电压5 ~ 10v下的上升时间和下降时间均优于400ps。

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Optical response time of InGaAs(P)/InP photodiodes

Speed of response of InGaAs(P)/InP based photodiodes has been analysed with structure parameters and as a function of bias voltage. It is shown that there exists a strong dependence of response time on the valence band discontinuities at the heterointerface InGaAs(P)/InP in the SAM photodiode structure (pile-up effect). The graded InGaAsP layer between absorption layer InGaAsP and InP multiplication layer in photodiode structure can successfully reduce this effect. The best measured InGaAs(P)/InP photodiodes have rise time and fall time at bias voltage 5-10 V better than 400 ps.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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