{"title":"Scanning probe microsystems","authors":"I. Rangelow","doi":"10.1109/ASDAM.2000.889455","DOIUrl":null,"url":null,"abstract":"In this article we summarize attempts devoted to the realization of our inspirations for development of Scanning Probe Microsystems applied in scanning probe microscopy. The Microsystem consists microcantilever with integrated tip, oscillator, and cantilever deflection sensor. The presented here Microsystem scenario allows for formation of d$\"t systems with the same piezoresistive deflection detector, but particulur tip-sensor for sensing dr3erent physicaUchemical values. In this way we designed and fabricated as a basic element, piezoresistive cantilever, which enables surface topography measurements with resolution of 0. Innr. A conductive tip isolatedfrom the cantilever was introduced to obtain microdevice for scanning capacitance microscopy and scanning tunnelling microscopy. With this microprobe we measured capacitance between the micro-tip and the sut$ace in the range of 10°F. Furthermore, a modification of the piezoresistors placement, permits jabrication of the multipurpose systems for lateral force microscopy, which enables measurements offriction forces with the resolution of InN. Based on the 'bimetallic' principe of actuation occurring by the temperature variations cantilever fenrtocalorimeter for detection of heat energy in the range of SOnW/Hz(-O.S) was developed The calorimeter contains also a thin Jlm metal microheater table. It serves possibility to determine the Infrared Radiation absorbed by the sensor and energy andpg mass changes induced by chemical reactions in the chemical& sensitive coating.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this article we summarize attempts devoted to the realization of our inspirations for development of Scanning Probe Microsystems applied in scanning probe microscopy. The Microsystem consists microcantilever with integrated tip, oscillator, and cantilever deflection sensor. The presented here Microsystem scenario allows for formation of d$"t systems with the same piezoresistive deflection detector, but particulur tip-sensor for sensing dr3erent physicaUchemical values. In this way we designed and fabricated as a basic element, piezoresistive cantilever, which enables surface topography measurements with resolution of 0. Innr. A conductive tip isolatedfrom the cantilever was introduced to obtain microdevice for scanning capacitance microscopy and scanning tunnelling microscopy. With this microprobe we measured capacitance between the micro-tip and the sut$ace in the range of 10°F. Furthermore, a modification of the piezoresistors placement, permits jabrication of the multipurpose systems for lateral force microscopy, which enables measurements offriction forces with the resolution of InN. Based on the 'bimetallic' principe of actuation occurring by the temperature variations cantilever fenrtocalorimeter for detection of heat energy in the range of SOnW/Hz(-O.S) was developed The calorimeter contains also a thin Jlm metal microheater table. It serves possibility to determine the Infrared Radiation absorbed by the sensor and energy andpg mass changes induced by chemical reactions in the chemical& sensitive coating.