Investigation of INGAAs/GAAs photodetectors with ALAs/GAAS nanolayers

Abstract

The results of investigation of two types of resonant cavity enhanced (RCE) photodetectors PIN and MSM are presented. The structures were designed for wavelength range of870nni I OOOnin; thus the In,GalJs absorption layer with proper composition of indium has been used as am active layer. All structures have been fabricated using Metal Organic Vapour Phase Epitaxy (MO VPE) growth on GaAs substrates with dflerent buffer and matching layer conjguration. For design of the photodeteclor of selective wavelength the resonant cmiily has been fornred with the use oJa Bragg reflector structure consisting oJ 10 pairs of AIAs/GaAs (76/GS.Snn,). The active InGaAs layer was deposited in one process on all substrates with different AIAs/GaAs namolayers conJguration. The device structures were fabricated using a standard W I C processing.