Ridge-waveguide InAs/GaAs lasers

L. Kuna, F. Uherek, J. Kovác, J. Jakabovic, V. Gottschalch, B. Rheinlander
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引用次数: 3

Abstract

We report on the reduction of current spreading of InAs/GaAs lasers by using ridge-waveguide geometry. For the investigation of current spreading, lasers with various ridge widths 5, 10, 20 and 50 /spl mu/m are prepared. The laser properties are experimentally studied by the light output versus current characteristics (L-I) and near field patterns (NFP). Threshold current densities (J/sub th/) as a function of ridge width are compared to oxide-stripe geometry lasers with the same material structure. Finally, lasers with ridge-waveguide geometry show a reduction of total J/sub th/ for all ridge widths. Furthermore, the fundamental zero-order mode TEM/sub 00/ is achieved for 10 /spl mu/m ridge width.
脊波导InAs/GaAs激光器
我们报道了利用脊波导几何结构减少InAs/GaAs激光器的电流扩散。为了研究电流扩散,制备了不同脊宽为5、10、20和50 /spl μ m的激光器。通过光输出对电流特性(L-I)和近场模式(NFP)实验研究了激光器的特性。比较了具有相同材料结构的氧化条纹几何激光器的阈值电流密度(J/sub /)与脊宽的关系。最后,具有脊波导几何形状的激光器显示出所有脊宽度的总J/sub /的减小。此外,在10 /spl mu/m脊宽下实现了基本零阶模式TEM/sub / 00/。
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