用范德波法测量高阻半导体

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889512

M. Morvic

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引用次数: 8

摘要

我们用van der Pauw方法测量了半绝缘(SI)和低温(LT) GaAs的输运参数。给出了半绝缘样品制备和获得可靠实验数据的详细步骤。在高电阻率半导体材料的情况下，使用恒压源而不是恒流源的优点得到了证明。

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On the measurement of high resistance semiconductors by the van der Pauw method

We measured transport parameters of semiinsulating (SI) and low temperature (LT) GaAs using the van der Pauw method. A detailed procedure for semiinsulating sample preparation and for obtaining reliable experimental data is given. The advantage of using a constant voltage source instead of a constant current source is demonstrated in the case of high resistivity semiconductor materials.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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