用于检测电离辐射的高电阻硅p-i-n二极管

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889545

W. Słysz, L. Ryć, M. Węgrzecki

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引用次数: 1

摘要

利用硼掺杂硅层(BDS)扩散制备了具有大表面积(5/spl倍/5 mm/sup 2/)、厚有源层(380 /spl mu/m)和极薄死层(0.13 /spl mu/m)的用于测量核辐射的硅p-i-n光电二极管。光电二极管已经使用来自/sup 241/Am的/spl α /-粒子和来自激光等离子体的x射线进行了测试。

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High-resistivity silicon p-i-n diodes for detection of ionising radiation

Silicon p-i-n photodiodes for measuring nuclear radiation, with a large surface area (5/spl times/5 mm/sup 2/), a thick (380 /spl mu/m) active layer and a very thin dead layer (0.13 /spl mu/m), have been fabricated by diffusion from a boron doped silicon layer (BDS). The photodiodes have been tested using /spl alpha/-particles from /sup 241/Am and X-rays from laser plasmas.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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