Delta-doped layer influence on Schottky diodes parameters

Abstract

We studied the influence of planar /spl delta/-doping on the parameters of Schottky diodes. It is shown that a /spl delta/-layer with the same type of conductivity as a base semiconductor material has no significant influence on the diode parameters. Changing the potential barrier shape after insertion of the /spl delta/-doped layer influences the diode current only slightly. Significant changes were found for Schottky diodes with /spl delta/-doped layers of opposite type conductivity compared with the base semiconductor. The resulting barriers are higher and depend on both the /spl delta/-doped layer position and the doping concentration.