Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889494

M. Çakar, M. Sadlam, Y. Onganer, Z. Horváth, A. Turut

引用次数: 0

Abstract

Metallic polypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV.

查看原文本刊更多论文

金属聚合物/p型Si肖特基触点的电流-电压和电容-电压特性

在室温下对金属聚吡咯聚合物/p-Si二极管进行了电流电压和电容电压测量。二极管的理想因数约为2，势垒高度约为0.54 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

自引率

0.00%

发文量