Pd/sub /Si/p-Si结的形态和电学行为

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) Pub Date : 2000-10-16 DOI:10.1109/ASDAM.2000.889496

Z. Horváth, J. Kumar, L. Dobos, B. Pécz, A. Tóth, S. Chand, J. Karányi

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引用次数: 0

摘要

在Pd/sub - 2/Si/p-Si结中观察到枝晶状形貌。在此基础上解释了获得的高理想因子和从电流电压和电容电压测量中评估的表观势垒高度之间的显着差异。

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Morphology and electrical behaviour of Pd/sub 2/Si/p-Si junctions

Dendrite like morphology was observed in Pd/sub 2/Si/p-Si junctions. The obtained high ideality factors and the significant difference between the apparent barrier heights evaluated from the current-voltage and capacitance-voltage measurements are explained on the basis of this morphology.

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ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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